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MBR4030PT PDF预览

MBR4030PT

更新时间: 2024-01-05 01:47:06
品牌 Logo 应用领域
台湾光宝 - LITEON 二极管
页数 文件大小 规格书
2页 42K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR4030PT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MBR4030PT 数据手册

 浏览型号MBR4030PT的Datasheet PDF文件第2页 
LITE-ON  
SEMICONDUCTOR  
MBR4030PT thru 4060PT  
- 30 60  
to  
REVERSE VOLTAGE  
FORWARD CURRENT  
Volts  
SCHOTTKY BARRIER RECTIFIERS  
- 40  
Amperes  
TO-3P  
FEATURES  
Metal of silicon rectifier,majority carrier conducton  
Guard ring for transient protection  
Low power loss, high efficiency  
F
E
TO-3P  
MIN.  
15.75  
21.25  
19.60  
3.78  
A
DIM.  
A
B
C
D
MAX.  
16.25  
21.75  
20.10  
4.38  
P
G
High current capability, low VF  
Q
O
B
High surge capacity  
Plastic package has UL flammability classification 94V-0  
PIN  
2
K
E
1.88  
4.87  
2.08  
5.13  
For use in low voltage,high frequency inverters,free  
whelling,and polarity protection applications  
3
1
F
G
H
4.4TYP.  
D
1.90  
2.93  
1.12  
2.90  
5.20  
2.10  
2.16  
3.22  
1.22  
3.20  
5.70  
2.40  
0.76  
2.18  
H
I
J
K
L
M
N
O
P
Q
C
MECHANICAL DATA  
Case : TO-3P molded plastic  
Polarity : As marked on the body  
Weight : 0.2 ounces, 5.6 grams  
Mounting position : Any  
I
N
J
0.51  
1.93  
M
L
L
20 TYP  
10 TYP  
PIN 1  
PIN 3  
PIN 2  
CASE  
All Dimensions in millimeter  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR  
4030PT 4035PT  
MBR  
MBR  
MBR  
MBR  
MBR  
4060PT  
CHARACTERISTICS  
SYMBOL  
UNIT  
4040PT 4045PT 4050PT  
Maximum Recurrent Peak Reverse Voltage  
RRM  
RMS  
V
V
V
V
30  
21  
30  
35  
24.5  
35  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
Maximum RMS Voltage  
V
Maximum DC Blocking Voltage  
Maximum Average Forward  
Rectified Current (See Fig.1)  
V
DC  
(AV)  
FSM  
I
A
40  
C=  
@T 125 C  
Peak Forward Surge Current  
8.3ms single half sine-wave  
A
I
400  
superimposed on rated load (JEDEC METHOD)  
10000  
Voltage Rate of Change (Rated VR)  
dv/dt  
V/us  
V
I
I
I
I
F
F
F
F
=20A @  
=20A @  
=40A @  
=40A @  
0.70  
0.60  
0.80  
0.75  
0.80  
0.70  
-
-
T
T
J
=25 C  
=125 C  
=25 C  
Maximum Forward  
Voltage (Note 1)  
J
V
F
T
J
T
J
=125 C  
1.0  
100  
1.4  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
J
J
=25 C  
@T =125 C  
I
R
mA  
C/W  
pF  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance  
per element (Note 3)  
R0JC  
700  
C
J
Operating Temperature Range  
Storage Temperature Range  
T
T
J
-55 to +150  
-55 to +175  
C
C
STG  
REV. 2, 01-Dec-2000, KTH11  
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.  
2. Thermal Resistance Junction to Case.  
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  

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