LITE-ON
SEMICONDUCTOR
MBR4030PT thru 4060PT
- 30 60
to
REVERSE VOLTAGE
FORWARD CURRENT
Volts
SCHOTTKY BARRIER RECTIFIERS
- 40
Amperes
TO-3P
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
F
E
TO-3P
MIN.
15.75
21.25
19.60
3.78
A
DIM.
A
B
C
D
MAX.
16.25
21.75
20.10
4.38
P
G
High current capability, low VF
Q
O
B
High surge capacity
Plastic package has UL flammability classification 94V-0
PIN
2
K
E
1.88
4.87
2.08
5.13
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
3
1
F
G
H
4.4TYP.
D
1.90
2.93
1.12
2.90
5.20
2.10
2.16
3.22
1.22
3.20
5.70
2.40
0.76
2.18
H
I
J
K
L
M
N
O
P
Q
C
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
I
N
J
0.51
1.93
M
L
L
20 TYP
10 TYP
PIN 1
PIN 3
PIN 2
CASE
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
4030PT 4035PT
MBR
MBR
MBR
MBR
MBR
4060PT
CHARACTERISTICS
SYMBOL
UNIT
4040PT 4045PT 4050PT
Maximum Recurrent Peak Reverse Voltage
RRM
RMS
V
V
V
V
30
21
30
35
24.5
35
40
28
40
45
31.5
45
50
35
50
60
42
60
Maximum RMS Voltage
V
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
V
DC
(AV)
FSM
I
A
40
C=
@T 125 C
Peak Forward Surge Current
8.3ms single half sine-wave
A
I
400
superimposed on rated load (JEDEC METHOD)
10000
Voltage Rate of Change (Rated VR)
dv/dt
V/us
V
I
I
I
I
F
F
F
F
=20A @
=20A @
=40A @
=40A @
0.70
0.60
0.80
0.75
0.80
0.70
-
-
T
T
J
=25 C
=125 C
=25 C
Maximum Forward
Voltage (Note 1)
J
V
F
T
J
T
J
=125 C
1.0
100
1.4
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
J
=25 C
@T =125 C
I
R
mA
C/W
pF
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
R0JC
700
C
J
Operating Temperature Range
Storage Temperature Range
T
T
J
-55 to +150
-55 to +175
C
C
STG
REV. 2, 01-Dec-2000, KTH11
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.