Datasheet > MBR4030PT_1

MBR4030PT_1

更新时间： 2024-11-20 04:16:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	60K
描述
40A SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR4030PT_1 数据手册

MBR4030PT - MBR4060PT

40A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

TO-3P

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

Dim

Min

1.88

4.68

20.63

18.5

2.1

Max

2.08

5.36

22.38

21.5

2.4

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 3)

0.51

15.38

1.90

2.9Æ

3.78

5.2

0.76

16.25

2.70

3.65Æ

4.50

5.7

Mechanical Data

Case: TO-3P

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

0.89

1.82

2.92

11.70

1.53

2.46

3.23

12.84

6.10

Terminals: Finish - Bright Tin. Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Ordering Information: See Last Page

Marking: Type Number

Weight: 5.6 grams (approximate)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

Characteristic

Symbol

Unit

4030PT 4035PT 4040PT 4045PT 4050PT 4060PT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

@ T_C= 125°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

400

Forward Voltage Drop

@ I_F= 20A, T_C

= 25°C

0.70

0.60

0.80

0.70

V_FM

I_RM

@ I_F= 20A, T_C= 125°C

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C= 25°C

@ T_C= 125°C

1.0

100

C_T

Typical Total Capacitance

(Note 2)

1100

1.4

°C/W

V/ms

°C

R_qJC

Typical Thermal Resistance Junction to Case

Voltage Rate of Change (Rated V_R)

(Note 1)

dV/dt

T_j,T_STG

10,000

-65 to +150

Operating and Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS23019 Rev. 8 - 2

1 of 3

MBR4030PT - MBR4060PT

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

下载PDF

与MBR4030PT_1相关器件

型号	品牌	获取价格	描述	数据表
MBR4030PT-B	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon,
MBR4030PT-B	MCC	获取价格	暂无描述
MBR4030PT-BT	MCC	获取价格	Rectifier Diode,
MBR4030W	MCC	获取价格	40 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR4030WT	MCC	获取价格	40 Amp Schottky Barrier Rectifier 20 to 60 Volts
MBR4035	SHUNYE	获取价格	40.0 AMP S . S c h o ttky Barrier Rectifiers
MBR4035APT(TUBE)	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon,
MBR4035APT-A	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon,
MBR4035CPT(TUBE)	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon,
MBR4035CT	LUNSURE	获取价格	40Amp schottky barrier rectifier 20to60 volts

与MBR4030PT_1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR4030PT_1

MBR4030PT_1 数据手册

与MBR4030PT_1相关器件

与MBR4030PT_1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR4030PT_1

MBR4030PT_1 数据手册

与MBR4030PT_1相关器件

与MBR4030PT_1相关文章

您还可以找

您在本页遇到什么问题？