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MBR4030PT-B PDF预览

MBR4030PT-B

更新时间: 2024-11-24 13:11:11
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
2页 87K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon,

MBR4030PT-B 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:400 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大反向电流:10000 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBR4030PT-B 数据手册

 浏览型号MBR4030PT-B的Datasheet PDF文件第2页 
MBR4030PT - MBR4060PT  
40A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
TO-3P  
Dim  
A
B
C
D
E
Min  
3.20  
Max  
3.50  
·
·
·
4.59  
5.16  
A
B
20.80  
19.70  
2.10  
21.30  
20.20  
2.40  
H
·
·
J
S
R
G
H
J
0.51  
0.76  
C
D
15.90  
1.70  
16.40  
2.70  
K
K
L
3.10Æ  
3.50  
3.30Æ  
4.51  
L
P*  
*2 Places  
Q
Mechanical Data  
·
·
G
M
N
P
5.20  
5.70  
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Marking: Type Number  
Weight: 5.6 grams (approx.)  
Mounting Position: Any  
N
1.12  
1.22  
1.93  
2.18  
·
·
·
·
E
Q
R
S
2.97  
3.22  
M
M
11.70  
12.80  
4.30 Typical  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
4030PT 4035PT 4040PT 4045PT 4O50PT 4060PT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
@ TC = 125°C  
40  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
400  
A
Forward Voltage Drop  
@ IF = 20A, TC  
= 25°C  
0.70  
0.60  
0.80  
0.70  
VFM  
IRM  
V
@ IF = 20A, TC = 125°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC = 25°C  
@ TC = 125°C  
1.0  
100  
mA  
Cj  
Typical Junction Capacitance  
(Note 2)  
1100  
1.4  
pF  
K/W  
V/ms  
°C  
RqJc  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
(Note 1)  
dV/dt  
Tj, TSTG  
10,000  
-65 to +150  
Operating and Storage Temperature Range  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS23019 Rev. E-2  
1 of 2  
MBR4030PT - MBR4060PT  

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