Datasheet > MBR3050PT

MBR3050PT

更新时间： 2024-11-24 12:21:07

品牌	Logo	应用领域
鲁光 - LGE		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	239K
描述
Schottky Barrier Rectifiers

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中文翻译

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技术参数
数据手册

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MBR3050PT 技术参数

Case Style：	TO-3P	IF（A）：	30
Maximum recurrent peak reverse voltage：	50	Peak forward surge current：	200
Maximum instantaneous forward voltage：	0.95	@IF(A)：	30
Maximum reverse current：	0.2	TJ(℃）：	/
class：	Diodes

MBR3050PT 数据手册

MBR3030PT-MBR30100PT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V

CURRENT: 30 A

Features

High surge capacity.

TO-3P(TO-247AD)

For use in low voltage, high frequency inverters, free

111 wheeling, and polarity protection applications.

15.8± 0.2

8.0± 0.2

5.0± 0.15

2.0± 0.15

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

φ3.6± 0.15

Mechanical Data

2.4± 0.2

Case:JEDEC TO-3P,molded plastic body

2.2± 0.15

1.2± 0.15

3.0± 0.1

Terminals:Solderable per MIL-STD-750,

Method 2026

Polarity: As marked

Position: Any

0.6± 0.1

5.4± 0.15

Weight: 0.223 ounce, 6.3 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Ratings at 25

MBR MBR

MBR MBR MBR MBR MBR MBR

UNITS

3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC blocking voltage

100

Maximum average forw ard total device

I_F(AV)

I_FSM

m rectified current @T_C= 105°C

Peak forw ard surge current 8.3ms single half

200

sine-w ave superimposed on rated load

Maximum forward

voltage

(I_F=15A,T_C=25

(I^F=15A,TC=125

(I_F=30A,TC=25

)

0.80

0.85

)

0.57

0.84

0.70

0.95

0.65

0.95

V_F

)

(Note 1)

(I_F=30A,TC=125

0.72

0.85

0.75

)

Maximum reverse current

at rated DC blocking voltage

@T_C=25

1.0

0.2

I_R

m A

@T_C=125

Maximum thermal resistance (Note2)

Operating junction temperature range

Storage temperature range

R_θJC

T_J

6.8

4.4

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance from junction to case.

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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与MBR3050PT相关器件

型号	品牌	获取价格	描述	数据表
MBR3050PT-B	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon,
MBR3050PT-C	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 50V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3050PT-E3	VISHAY	获取价格	DIODE 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Dio
MBR3050PT-E3/45	VISHAY	获取价格	DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR3050PT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 50V V(RRM), Silicon, TO-247AD, GREEN,
MBR3050PTR	THINKISEMI	获取价格	30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
MBR3050PT-S	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 50V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3050ST	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3060	ASEMI	获取价格	MBR3060Dual High-Voltage Schottky Rectifiers
MBR3060	JSMC	获取价格	SCHOTTKY BARRIER DIODE

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