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MBR3050PT PDF预览

MBR3050PT

更新时间: 2024-11-27 04:41:07
品牌 Logo 应用领域
强茂 - PANJIT 肖特基二极管瞄准线功效局域网
页数 文件大小 规格书
2页 41K
描述
30 AMPERES SCHOTTKY BARRIER RECTIFIERS

MBR3050PT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247AD包装说明:ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.19其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:275 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR3050PT 数据手册

 浏览型号MBR3050PT的Datasheet PDF文件第2页 
MBR3020PT~MBR30200PT  
30 AMPERES SCHOTTKY BARRIER RECTIFIERS  
Unit: inch (mm)  
TO-3P  
VOLTAGE  
30 Amperes  
20 to 200 Volts CURRENT  
FEATURES  
.640(16.25)  
.620(15.75)  
.199(5.05)  
.175(4.45)  
.142(3.6)  
.125(3.2)  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
• High current capability  
• Guardring for overvlotage protection  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
.095(2.4)  
.126(3.2)  
.110(2.8)  
• Component are in compliance with EU RoHS 2002/95/EC directives  
.050(1.25)  
.045(1.15)  
.030(0.75)  
.017(0.45)  
.225(5.7)  
.204(5.2)  
.225(5.7)  
.204(5.2)  
MECHANICALDATA  
AC  
AC  
Case: TO-3P molded plastic  
Positive CT  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
Polarity: As marked.  
Mounting Position: Any  
Weight: 0.2 ounces, 5.6 grams.  
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
M B R  
M B R  
M B R  
M B R  
M B R  
M B R  
M B R  
M B R  
M B R  
M B R  
PA R A M E TE R  
S YM B O L  
U N ITS  
V
3020P T 3030P T 3040P T 3045P T 3050P T 3060P T 3080P T 30100P T 30150P T 30200P T  
M axim um R ecurrent P eak R everse Voltage  
V
V
R R M  
20  
14  
20  
30  
21  
30  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
150  
105  
150  
200  
140  
200  
M axim um R M S Voltage  
R M  
S
V
V
A
A
V
M axim um D C B locking Voltage  
V
D C  
100  
M axim um A verage Forw ard C urrent (S ee fig.1)  
IAV  
30  
200  
0.75  
P eak Forw ard S urge C urrent :8.3m s single half sine-  
w ave superim posed on rated load(JE D E C m ethod)  
IFS M  
M axim um Forw ard Voltage at 15A , per leg  
M axim um D C R everse C urrent Tc=25 O C  
V
F
0.65  
0.8  
0.92  
0.1  
20  
IR  
m A  
at R ated D C B locking Voltage  
T
c
=125O  
C
TypicalTherm alR esistance  
R θJC  
1.4  
O C / W  
O perating Junction Tem perature R ange  
S torage Tem perature R ange  
T
J
-50 TO  
-50 TO  
+
+
150  
175  
O C  
T
S TG  
O C  
Notes :  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-DEC.22.2006  

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