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MBR20100CT-G PDF预览

MBR20100CT-G

更新时间: 2024-11-14 07:17:59
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管局域网
页数 文件大小 规格书
3页 68K
描述
SMD Schottky Barrier Rectifiers

MBR20100CT-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.73
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:100 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR20100CT-G 数据手册

 浏览型号MBR20100CT-G的Datasheet PDF文件第2页浏览型号MBR20100CT-G的Datasheet PDF文件第3页 
SMD Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
MBR2030CT-G Thru. MBR20150CT-G  
Voltage: 30 to 150 V  
Current: 20.0 A  
RoHS Device  
Features  
-Metal of silicon rectifier, majority carrier conduction.  
-Guard ring for transient protection.  
-Low power loss, high efficiency.  
TO-220AB  
0.187(4.70)  
0.148(3.80)  
0.055(1.40)  
0.047(1.20)  
0.108  
0.153(3.90)  
0.146(3.70)  
0.413(10.50)  
0.347( 9.50)  
(2.75)  
-High current capability, low VF.  
-High surge capacity.  
0.270(6.90)  
0.230(5.80)  
0.610(15.50)  
0.583(14.80)  
-For use in low voltage, high frequency inverters,  
free wheeling,and polarity protection applications.  
Mechanical Data  
0.157  
(4.0)  
0.583(14.80)  
0.531(13.50)  
0.051(1.30)  
MAX  
-Case: TO-220AB, molded plastic  
-Epoxy: UL 94-V0 rate flame retardant.  
-Polarity: As marked on the body.  
-Mounting position: Any  
0.024(0.60)  
0.012(0.30)  
0.102(2.60)  
0.091(2.30)  
0.043(1.10)  
0.032(0.80)  
0.126  
(3.20)  
-Weight: 2.24 grams  
Dimensions in inches and (millimeter)  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Symbol  
Parameter  
Unit  
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
150  
105  
150  
V
V
V
V
Maximum RMS Voltage  
V
DC  
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current ( See Fig.1 )  
I
(AV)  
20.0  
150  
A
A
Peak Forward Surage Current ,  
IFSM  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load(JEDEC Method)  
IF=10A@ TJ= 25°C  
-
0.80  
0.70  
0.95  
0.85  
0.10  
10.0  
0.85  
0.75  
0.95  
0.85  
0.10  
7.50  
0.95  
0.85  
1.05  
0.95  
0.10  
5.00  
IF=10A@ TJ=125°C  
IF=20A@ TJ= 25°C  
IF=20A@ TJ=125°C  
@ TJ= 25°C  
0.57  
0.84  
0.72  
0.10  
15.0  
Peak Forward Voltage  
(Note 1)  
V
F
V
Maximum DC Reverse Current  
at Rate DC Blocking Voltage  
mA  
IR  
@ TJ= 125°C  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
Operating Temperature Range  
Storage Temperature Range  
pF  
°C/W  
°C  
C
J
400  
320  
R
θJC  
1.50  
3.50  
TJ  
-55 to +150  
-55 to +175  
TSTG  
°C  
NOTES:  
1. 300us pulse width,2% duty cycle.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance junction to case.  
REV:B  
Page 1  
QW-BB046  
Comchip Technology CO., LTD.  

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