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MBR16150CT PDF预览

MBR16150CT

更新时间: 2024-11-11 11:12:03
品牌 Logo 应用领域
虹扬 - HY 整流二极管瞄准线功效局域网
页数 文件大小 规格书
2页 101K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR16150CT 技术参数

生命周期:Contact Manufacturer包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.05 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:150 V最大反向电流:100 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR16150CT 数据手册

 浏览型号MBR16150CT的Datasheet PDF文件第2页 
MBR1630CT thru MBR16150CT  
REVERSE VOLTAGE - 30 to 150Volts  
FORWARD CURRENT - 16.0 Amperes  
SCHOTTKY BARRIER RECTIFIERS  
TO-220AB  
FEATURES  
.187(4.7)  
Metal of silicon rectifier , majority carrier conduction  
.108  
(2.75)  
.148(3.8)  
.055(1.4)  
.047(1.2)  
.153(3.9)  
.146(3.7)  
.413(10.5)  
.374(9.5)  
Guard ring for transient protection  
Low power loss,high efficiency  
High current capability,low VF  
.270(6.9)  
.230(5.8)  
High surge capacity  
Plastic package has UL flammability  
.610(15.5)  
.583(14.8)  
classification 94V-0  
For use in low voltage,high frequency inverters,free  
wheeling,and polarity protection applications  
.157  
(4.0)  
.583(14.8)  
.531(13.5)  
.051  
(1.3)  
MECHANICAL DATA  
Case: TO-220AB molded plastic  
Polarity: As marked on the body  
Weight: 0.08ounces,2.24 grams  
Mounting position :Any  
.043(1.1)  
.032(0.8)  
.024(0.6)  
.012(0.3)  
.102(2.6)  
.091(2.3)  
.126  
(3.2)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
SYMBOL  
UNIT  
CHARACTERISTICS  
1630CT 1640CT 1650CT 1660CT 1680CT 16100CT 16150CT  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
150  
105  
150  
V
V
V
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward  
I(AV)  
16.0  
A
Rectified Current ( See Fig.1)  
Peak Forward Surge Current  
IFSM  
150  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
0.84  
0.57  
0.72  
-
0.75  
0.85  
0.75  
0.95  
0.85  
Peak Forward  
IF=8A @TJ=25℃  
IF=8A @TJ=125℃  
IF=16A @TJ=25℃  
IF=16A @TJ=125℃  
1.05  
0.65  
Voltage (Note1)  
0.92  
VF  
IR  
V
-
-
-
-
0.3  
10  
0.1  
5.0  
Maximum DC Reverse Current  
at Rated DC Bolcking Voltage  
@TJ=25℃  
mA  
@TJ=125℃  
400  
200  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
Operating Temperature Range  
Storage Temperature Range  
CJ  
RθJC  
TJ  
pF  
/W  
3.0  
-55 to +150  
-55 to +175  
TSTG  
NOTES:1.300us pulse width,2% duty cycle.  
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.  
3.Thermal resistance junction to case.  
~ 260 ~  

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