Datasheet > MBR16150PT

MBR16150PT

更新时间： 2024-10-15 01:19:35

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描述
SCHOTTKY BARRIER RECTIFIERS

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MBR16150PT 数据手册

Diode Semiconductor Korea

MBR16150PT,MBR16200PT

Reverse Voltage: 150,200V

Forward Current: 16A

SCHOTTKY BARRIER RECTIFIERS

FEATURES

TO-3P

15.8± 0.2

5.0± 0.15

Metal-Semiconductor junction with guard ring

Epitaxial construction

8.0± 0.2

2.0± 0.15

Low forward voltage drop, low swithing losses

High surge capacity

φ3.6± 0.15

For use in low voltage, high frequency inverters free

wheeling, and polarity protection applications

2.4± 0.2

The plastic material carries U/L recognition 94V-0

2.2± 0.15

1.2± 0.15

3.0± 0.1

MECHANICAL DATA

Case: JEDEC TO-3P, molded plastic body

Terminals: Solderable per MIL-STD-

0.6± 0.1

750, Method 2026

Polarity: As marked

Mounting Position: Any

Weight: 0.223 ounce, 6.3 grams

5.4± 0.15

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Parameter

Symbol

MBR16150PT

MBR16200PT

UNITS

V_RRM

V_RWS

V_DC

Maximum recurrent peak reverse voltage

Maximum RMS voltage

150

135

150

200

140

200

Maximum DC blocking voltage

Maximum average forward tolal device

rectified current @T_C=130°C

I_(AV)

Peak forward surge current

8.3ms single half sine-wave

superimposed on rated load

I_FSM

150

Maximum instantaneous

forward voltage @ 8.0A

V_F

I_R

0.95

Maximum reverse current @T_A=25°C

at rated DC blocking voltage @T_A=100°C

0.2

R_θJC

T_J

Maximum thermal resistance (Note1)

Operating junction temperature range

Storage temperature range

°C/W

°C

1.5

-55 --- +150

T_STG

°C

-55 --- +150

NOTES: 1. Thermal resistance from junction to case.

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