Datasheet > MBR10H100CTC0G

MBR10H100CTC0G

更新时间： 2022-02-26 11:39:46

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	207K
描述
Dual Common Cathode Schottky Rectifier

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR10H100CTC0G 数据手册

MBR10H100CT thru MBR10H200CT

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

TO-220AB

Case: TO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.88 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR

10H100CT

100

MBR

10H150CT

150

MBR

10H200CT

200

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

105

140

Maximum DC blocking voltage

100

150

200

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

120

Peak repetitive reverse surge current (Note 1)

1.0

0.5

Maximum instantaneous forward voltage (Note 2)

I_F= 5A, T_J=25℃

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

I_F= 5A, T_J=125℃

V_F

I_F=10A, T_J=25℃

I_F=10A, T_J=125℃

Maximum reverse current @ rated VR

T_J=25 ℃

I_R

μA

T_J=125 ℃

V/μs

^OC/W

^OC

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

1.5

dV/dt

R_θJC

T_J

Operating junction temperature range

Storage temperature range

- 55 to +175

^OC

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1308059

Version: I13

12 3 4

下载PDF

与MBR10H100CTC0G相关器件

型号	品牌	描述	获取价格	数据表
MBR10H100CT-E3	VISHAY	DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode	获取价格
MBR10H100CT-E3/45	VISHAY	Dual Common-Cathode High-Voltage Schottky Rectifier	获取价格
MBR10H100CTG	ONSEMI	SWITCHMODE Power Rectifier 100 V, 10 A	获取价格
MBR10H100CTHC0	TSC	Dual Common Cathode Schottky Rectifier	获取价格
MBR10H100CTHE3/45	VISHAY	Dual Common-Cathode High-Voltage Schottky Rectifier	获取价格
MBR10H100-E3/45	VISHAY	High-Voltage Schottky Rectifier	获取价格