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MBR10H100CTC0G PDF预览

MBR10H100CTC0G

更新时间: 2024-11-21 01:09:11
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Dual Common Cathode Schottky Rectifier

MBR10H100CTC0G 数据手册

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MBR10H100CT thru MBR10H200CT  
Taiwan Semiconductor  
CREAT BY ART  
Dual Common Cathode Schottky Rectifier  
FEATURES  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
TO-220AB  
Case: TO-220AB  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - halogen-free  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test,  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs maximum  
Weight: 1.88 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
MBR  
10H100CT  
100  
MBR  
10H150CT  
150  
MBR  
10H200CT  
200  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
100  
150  
200  
Maximum average forward rectified current  
IF(AV)  
10  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
10  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
IRRM  
120  
A
A
Peak repetitive reverse surge current (Note 1)  
1.0  
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF= 5A, TJ=25  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
IF= 5A, TJ=125℃  
VF  
V
IF=10A, TJ=25℃  
IF=10A, TJ=125℃  
Maximum reverse current @ rated VR  
TJ=25 ℃  
IR  
5
1
μA  
TJ=125 ℃  
mA  
V/μs  
OC/W  
OC  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
1.5  
dV/dt  
RθJC  
TJ  
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
OC  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1308059  
Version: I13  

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