Datasheet > MBR1090_09

MBR1090_09

更新时间： 2024-01-31 15:49:48

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	141K
描述
High-Voltage Schottky Rectifier

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获取价格

数据手册

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MBR1090_09 数据手册

New Product

MBR(F,B)1090 & MBR(F,B)10100

Vishay General Semiconductor

High-Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AC

ITO-220AC

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

MBR1090

MBR10100

PIN 1

MBRF1090

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AC and ITO-220AC

package)

MBRF10100

PIN 1

CASE

PIN 2

TO-263AB

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MBRB1090

MBRB10100

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

V_RRM

I_FSM

90 V, 100 V

150 A

V_F

0.65 V

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RWM

V_DC

MBR1090

MBR10100

100

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

Maximum DC blocking voltage

100

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

150

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

130

Peak repetitive reverse current

at t_p= 2 µs, 1 kHz, T_J= 38 °C 2 °C

I_RRM

0.5

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/µs

Isolation voltage (ITO-220AC only)

From terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

°C

Document Number: 89034

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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