Datasheet > MBR1090_12

MBR1090_12

更新时间： 2024-02-11 22:28:48

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	116K
描述
High-Voltage Schottky Rectifier

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获取价格

数据手册

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MBR1090_12 数据手册

New Product

MBR1090, MBR10100

Vishay General Semiconductor

High-Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

TMBS^®

TO-220AC

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21

definition

TYPICAL APPLICATIONS

PIN 1

PIN 2

For use in high frequency rectifier of switching mode

power supplies, freewheeling diodes, DC/DC

converters or polarity protection application.

CASE

MECHANICAL DATA

Case: TO-220AC

Molding compound meets UL 94 V-0 flammability

rating

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_RRM

I_FSM

90 V, 100 V

150 A

V_F

0.65 V

M3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RWM

V_DC

MBR1090

MBR10100

100

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

Maximum DC blocking voltage

100

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

150

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

Document Number: 89193

Revision: 30-Nov-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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