Datasheet > MBR1065BCT

MBR1065BCT

更新时间： 2024-11-25 00:58:59

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	957K
描述
10A Surface Mount High Power Schottky Barrier Rectifiers

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MBR1065BCT 数据手册

MBR1040BCT THRU MBR10200BCT

10A Surface Mount High Power Schottky Barrier Rectifiers

■ Features

■ Outline

D²PAK(TO-263)

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

0.411(10.45)

0.380(9.65)

0.055(1.40)

0.190(4.83)

0.245(6.22)

•Silicon epitaxial planar chip, metal silicon junction.

0.031(0.80)

0.160(4.06)

MIN

•

Suffix "H" indicates Halogen-free part, ex.MBR1040BCTH. Lead-

f•ree parts meet environmental standards of

MIL-STD-19500 /228

0.055(1.40)

0.045(1.14)

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-263 / D²PAK

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 1.70 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

125

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

@5A, T_A= 25^OC

V_F(V)

forward voltage

@5A, T_A= 125^OC

V_F(V)

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

MBR1040BCT

MBR1045BCT

MBR1060BCT

MBR1065BCT

MBR1040BCT

MBR1045BCT

MBR1060BCT

MBR1065BCT

31.5

0.70

0.79

0.57

0.70

-55 ~ +150

-55 ~ +175

45.5

MBR10100BCT MBR10100BCT

MBR10150BCT MBR10150BCT

MBR10200BCT MBR10200BCT

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MBR1065BCT相关器件

型号	品牌	获取价格	描述	数据表
MBR1065FCT	YANGJIE	获取价格	ITO-220AB
MBR1065H	ASEMI	获取价格	MBR1065Dual High-Voltage Schottky Rectifiers
MBR1070	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR1070	MOTOROLA	获取价格	SWITCHMODE⑩ Power Rectifiers
MBR1070	LUNSURE	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR1070CT	DIODES	获取价格	10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
MBR1070CT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR1070CT	LUNSURE	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR1070CT_1	DIODES	获取价格	10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
MBR1070FCT	CJ	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 70V V(RRM), Silicon, TO-220AB, PLASTIC,

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