5秒后页面跳转
MBR1080 PDF预览

MBR1080

更新时间: 2024-02-26 11:49:22
品牌 Logo 应用领域
ASEMI 二极管瞄准线高压功效局域网
页数 文件大小 规格书
3页 518K
描述
Dual High-Voltage Schottky Rectifiers

MBR1080 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR1080 数据手册

 浏览型号MBR1080的Datasheet PDF文件第2页浏览型号MBR1080的Datasheet PDF文件第3页 
MBR1080 THUR MBR10100  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 80V  
IF(AV)= 10A  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
VRRM= 90V  
IF(AV)= 10A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 100V  
IF(AV)= 10A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR1080、MBR1090、MBR10100 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the  
device uses the two chip, the common cathode, the plastic  
package structure.  
Polarity  
Absolute Maximum Ratings  
Item  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
MBR10100  
100  
Symbol MBR1080 MBR1090  
Unit  
V
V
VRRM  
VDC  
80  
80  
90  
90  
100  
Average Rectified Forward Current TC=150℃  
Device  
Whole  
10  
5
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Represent  
ative  
Test Condition  
Item  
Minimum  
MBR1080 MBR1090MBR10100 Unit  
100  
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
uA  
mA  
V
IR  
VR=VRRM  
IF=5A  
1
0.84 0.85 0.86  
www.asemi.tw  
Page1  

与MBR1080相关器件

型号 品牌 获取价格 描述 数据表
MBR1080-1 SMC

获取价格

Switching power supply
MBR1080100CT-1 SMC

获取价格

SCHOTTKY RECTIFIER
MBR1080-BP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, TO-220AC, ROHS CO
MBR1080-BP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 80V V(RRM), Silicon, TO-220AC,
MBR1080C UTC

获取价格

rectifier diodes
MBR1080CD DYELEC

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR1080CD NIUHANG

获取价格

SCHOTTKY RECTIFIERS
MBR1080CGD DYELEC

获取价格

SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS
MBR1080CG-TA3-T UTC

获取价格

High Surge Capability
MBR1080CG-TF3-T UTC

获取价格

High Surge Capability