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MBR1060DS PDF预览

MBR1060DS

更新时间: 2024-09-21 01:01:59
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 477K
描述
Surface Mount Schottky Barrier Rectifier

MBR1060DS 数据手册

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MBR1040DS THRU MBR10200DS TO-252  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 40 to 200 V  
Forward Current - 10 A  
FEATURES  
High current capability  
Low forward voltage drop  
High surge capability  
High temperature soldering guaranteed  
Mounting position: any  
Lead free in comply with EU RoHS 2011/65/EU directives  
MECHANICAL DATA  
Case: TO-252(D-PAK)  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.32g /0.011oz  
TO-252(D-PAK)  
Maximum Ratings and Electrical characteristics  
Ratings at 25 ° ambient temperature unless otherwise specified.  
Parameter  
Symbols MBR1040DS MBR1045DS MBR1060DS MBR10100DS MBR10150DS MBR10200DS Units  
Maximum Repetitive Peak Reverse Voltage  
V
RRM  
RMS  
40  
28  
40  
45  
31.5  
45  
60  
42  
60  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
A
Maximum RMS voltage  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
V
DC  
100  
IF(AV)  
10.0  
150  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load (JEDEC method)  
IFSM  
V
F
Maximum Instantaneous Forward Voltage at 10 A  
0.65  
600  
0.70  
0.85  
0.90  
0.92  
V
Maximum Instantaneous Reverse Current TA = 25°C  
0.1  
20  
0.05  
20  
IR  
mA  
at Rated DC Reverse Voltage  
TA = 100°C  
Typical Junction Capacitance1)  
C
j
400  
pF  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
°C/W  
R
θJA  
35  
Tj  
-55 ~ +150  
-55 ~ +150  
-55 ~ +175  
-55 ~ +175  
°C  
°C  
T
stg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 10cm X 10cmX1mm copper pad areas.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 60V V(RRM), Silicon, TO-220AC, ROHS CO