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MBR1045ULPS-TP PDF预览

MBR1045ULPS-TP

更新时间: 2024-11-23 13:11:11
品牌 Logo 应用领域
美微科 - MCC 整流二极管局域网
页数 文件大小 规格书
2页 142K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-277B, ROHS COMPLIANT, PLASTIC PACKAGE-3

MBR1045ULPS-TP 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.14Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.47 V
JEDEC-95代码:TO-277BJESD-30 代码:R-PDSO-F3
最大非重复峰值正向电流:275 A元件数量:1
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:45 V
最大反向电流:250 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR1045ULPS-TP 数据手册

 浏览型号MBR1045ULPS-TP的Datasheet PDF文件第2页 
M C C  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MBR1020  
THRU  
MBR10100  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
10 Amp  
Schottky Barrier  
Rectifier  
Low power loss high efficiency  
High surge capacity, High current capability  
20 to 100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +175°C  
TO-220AC  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
B
L
M
RMS  
DC  
C
Voltage  
Blocking  
Voltage  
D
A
K
E
F
MBR1020 MBR1020  
MBR1030 MBR1030  
MBR1035 MBR1035  
MBR1040 MBR1040  
MBR1045 MBR1045  
MBR1060 MBR1060  
MBR1080 MBR1080  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
PIN  
1
2
30V  
35V  
40V  
45V  
60V  
80V  
100V  
G
I
J
56V  
H
N
MBR10100 MBR10100  
70V  
100V  
PIN 1  
PIN 2  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
CASE  
Average Forward  
Current  
IF(AV)  
10A  
TC = 125°C  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
Maximum Forward  
Voltage Drop Per  
Element  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
E
F
G
H
I
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
2.54  
5.84  
9.65  
------  
12.70  
4.83  
0.51  
0.30  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
10.67  
6.35  
14.73  
5.33  
1.14  
0.64  
ꢄꢇꢈꢉ  
.560  
.380  
.100  
.230  
.380  
------  
.500  
.190  
.020  
.012  
.139  
.140  
.045  
.080  
.625  
.420  
.135  
.270  
.420  
.250  
.580  
.210  
.045  
.025  
.161  
.190  
.055  
.115  
VF  
.84V  
.95V  
.84V  
IFM = 20 A mper  
TA =  
25°C  
IFM = 10 A mper  
MBR1020-1045  
MBR1045-1060  
MBR1080-10100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
J
K
L
M
3.53  
3.56  
1.14  
4.09  
4.83  
1.40  
Voltage  
IR  
CJ  
MBR1020-1045  
MBR1060-10100  
0.1mA TJ = 25°C  
0.15mA  
N
2.03  
2.92  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=4.0V  
400pF  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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