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MBR1050 PDF预览

MBR1050

更新时间: 2024-11-25 22:46:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管局域网
页数 文件大小 规格书
3页 48K
描述
10 Ampere Schottky Barrier Rectifiers

MBR1050 数据手册

 浏览型号MBR1050的Datasheet PDF文件第2页浏览型号MBR1050的Datasheet PDF文件第3页 
MBR1035 - MBR1060  
.412(10.5)  
.185(4.70)  
.175(4.44)  
DIA  
Features  
MAX  
.154(3.91)  
.148(3.74)  
.055(1.40)  
.045(1.14)  
Low power loss, high efficiency.  
High surge capacity.  
For use in low voltage, high frequency  
inverters, free wheeling, and polarity  
protection applications.  
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
.594(15.1)  
.587(14.91)  
Dimensions  
are in:  
inches (mm)  
1
2
.16(4.06)  
.14(3.56)  
Metal silicon junction, majority carrier  
conduction.  
.11(2.79)  
.10(2.54)  
.56(14.22)  
.53(13.46)  
High current capacity, low forward  
voltage drop.  
.037(0.94)  
.027(0.68)  
Guard ring for over voltage protection.  
TO-220AC  
PIN 1 +  
.205(5.20)  
.195(4.95)  
+
.025(0.64)  
.014(0.35)  
CASE  
PIN 2 -  
CASE Positive  
10 Ampere Schottky Barrier Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
if(repetitive)  
Average Rectified Current  
10  
A
Peak Repetitive Forward Current  
(Rated VR , Square Wave, 20 KHz) @ TA = 135°C  
Peak Forward Surge Current  
20  
A
A
if(surge)  
8.3 ms single half-sine-wave  
150  
Superimposed on rated load (JEDEC method)  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
2.0  
16.6  
60  
W
mW/°C  
°C/W  
RθJA  
RθJL  
Tstg  
TJ  
Thermal Resistance, Junction to Lead  
Storage Temperature Range  
2.0  
°C/W  
°C  
-65 to +175  
-65 to +150  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
1035  
35  
1045  
45  
1050  
50  
1060  
60  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
V
V
V
24  
31  
35  
42  
35  
45  
50  
60  
DC Reverse Voltage  
(Rated VR)  
10,000  
V/uS  
Voltage Rate of Change (Rated VR)  
Maximum Reverse Current  
0.1  
15  
mA  
mA  
@ rated VR  
TA = 25°C  
TA = 125°C  
Maximum Forward Voltage  
F = 10 A, TC = 25°C  
-
0.80  
0.70  
0.95  
0.85  
V
V
V
V
I
0.57  
0.84  
0.72  
IF = 10 A, TC = 125°C  
IF = 20 A, TC = 25°C  
IF = 20 A, TC = 125°C  
Peak Repetitive Reverse Surge  
Current  
1.0  
0.5  
A
2.0 us Pulse Width, f = 1.0 KHz  
MBR1035 - MBR1060, Rev. A  
1999 Fairchild Semiconductor Corporation  

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