CREAT BY ART
MBR1035CT - MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
RoHS
Pb
COMPLIANCE
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
MBR10XXCT = Specific Device Code
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
G
= Green Compound
= Year
Polarity: As marked
Y
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.88 grams
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR MBR
Symbol 1035 1045 1050 1060 1090 10100 10150 10200 Units
Type Number
CT
CT
CT
CT
CT
CT
CT
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
35
45
50
60
90
100
150
200
V
V
V
24
35
31
45
35
50
42
60
63
90
70
105
150
140
200
Maximum DC Blocking Voltage
100
IF(AV)
Maximum Average Forward Rectified Current
10
10
A
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
IRRM
120
A
A
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, TA=25℃
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
IF=5A, TA=125℃
VF
V
IF=10A, TA=25℃
IF=10A, TA=125℃
0.1
Maximum Instantaneous Reverse Current @ T A=25 ℃
mA
mA
IR
at Rated DC Blocking Voltage
@ T A=125 ℃
15
10
2
5
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
10,000
1.5
dV/dt
RθJC
TJ
V/us
OC/W
OC
- 65 to + 150
- 65 to + 175
OC
TSTG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Version:H11