Datasheet > MBR1040

MBR1040

更新时间： 2024-11-24 14:53:39

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	740K
描述
肖特基二极管

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数据手册

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MBR1040 数据手册

MBR1020-MBR10100

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V

CURRENT: 10 A

TO-220AC

Features

4.5± 0.2

10.2± 0.2

1.4± 0.2

High surge capacity.

φ 3.8± 0.15

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications.

111

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

2.6± 0.2

Mechanical Data

0.9± 0.1

Case:JEDEC TO-220AC,molded plastic body

0.5± 0.1

5.0± 0.1

Polarity: As marked

Position: Any

Weight: 0.069 ounces,1.96 gram

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBR MBR MBR MBR MBR MBR MBR MBR MBR

1020 1030 1035 1040 1045 1050 1060 1090 10100

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM20

V_RMS14

100

Maximum DC blocking voltage

V_DC

100

Maximum average forw ard total device

I_F(AV)

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

I_FSM

150

sine-wave superimposed on rated load

Maximum forw ard

voltage

(I_F=10A,T_C=25

(I_F=10A,T_C=125

(I _F=20A,T_C=25

(I_F=20A,T_C=125

)

0.80

)

0.57

0.84

0.72

0.70

0.95

0.65

0.95

V_F

(Note 1)

)

0.85

0.75

Maximum reverse current

at rated DC blocking voltage

@T_C=25

0.1

I_R

m A

@T_C=125

6.0³⁾

Maximum thermal resistance (Note2)

R_θJC

T_J

2.0

Operating junction temperature range

- 55 ---- + 150

Storage temperature range

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance from junction to case.

3.T_C=100

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170301-P1

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