Datasheet > MBR1035-N3

MBR1035-N3

更新时间： 2024-11-26 12:20:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	157K
描述
Schottky Rectifier, 10 A

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MBR1035-N3 数据手册

VS-MBR10...PbF Series, VS-MBR10...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 10 A

FEATURES

Base

• 150 °C T_Joperation

cathode

• High frequency operation

• Low forward voltage drop

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode Anode

TO-220AC

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AC

10 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 45 V

0.57 V

DESCRIPTION

V_Fat I_F

This Schottky rectifier has been optimized for low reverse

leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

15 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

8 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

I_FRM

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

T_C= 135 °C

35/45

1060

t_p= 5 μs sine

10 A_pk, T_J= 125 °C

Range

V_F

0.57

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-MBR1035PbF

VS-MBR1035-N3

VS-MBR1045PbF

VS-MBR1045-N3 UNITS

Maximum DC reverse

voltage

V_R

Maximum working peak

reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

I_F(AV)

I_FRM

TEST CONDITIONS

T_C= 135 °C, rated V_R

Rated V_R, square wave, 20 kHz, T_C= 135 °C

Following any rated load

VALUES UNITS

Maximum average forward current

Peak repetitive forward current

5 µs sine or 3 µs rect. pulse condition

and with rated V_RRMapplied

1060

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

150

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 2 A, L = 4 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 29-Aug-11

Document Number: 94284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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