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MBR1040 PDF预览

MBR1040

更新时间: 2024-02-08 20:01:49
品牌 Logo 应用领域
ASEMI 二极管瞄准线高压功效局域网
页数 文件大小 规格书
3页 185K
描述
MBR1040Dual High-Voltage Schottky Rectifiers

MBR1040 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR1040 数据手册

 浏览型号MBR1040的Datasheet PDF文件第2页浏览型号MBR1040的Datasheet PDF文件第3页 
MBR1040 THUR MBR1050  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 40V  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
IF(AV)= 10A  
VRRM= 45V  
IF(AV)= 10A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 50V  
IF(AV)= 10A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR1040、MBR1045、MBR1050 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The potential  
metal and the silicon alloy technology, the device uses the  
two chip, the common cathode, the plastic half package  
structure.  
Polarity  
Absolute Maximum Ratings  
Item  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
MBR1050  
50  
Symbol MBR1040 MBR1045  
Unit  
V
V
VRRM  
VDC  
40  
40  
45  
45  
50  
Average Rectified Forward Current TC=150℃  
Device  
Whole  
10  
5
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Representat  
ive  
Test Condition  
Item  
Minimum  
MBR1040 MBR1045 MBR1050Unit  
200  
5
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
uA  
mA  
V
IR  
VR=VRRM  
IF=5A  
0.69  
0.72  
0.67  
www.asemi.tw  
Page1  

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