MBR1040

更新时间： 2024-11-22 22:46:23

品牌	Logo	应用领域
美台 - DIODES		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	58K
描述
10A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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MBR1040 数据手册

MBR1030 - MBR1060

10A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AC

Low Power Loss, High Efficiency

High Surge Capability

Dim

Min

14.22

9.65

2.54

5.84

Max

15.88

10.67

3.43

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Application

6.86

6.35

Plastic Material: UL Flammability

Classification Rating 94V-0

Pin 1

Pin 2

12.70

0.51

14.73

1.14

3.53Æ 4.09Æ

Mechanical Data

3.56

1.14

0.30

2.03

4.83

1.40

0.64

2.92

5.33

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Pin 1 +

Pin 2 -

Polarity: See Diagram

Case

Weight: 2.24 grams (approx.)

Mounting Position: Any

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

1030

MBR

1035

MBR

1040

MBR

1045

MBR

1050

MBR

1060

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

(Note 1)

@T_C= 125°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

150

Forward Voltage Drop

@I_F= 10A, T_C= 25°C

@I_F= 10A, T_C= 125°C

0.84

0.57

0.95

0.70

V_FM

I_RM

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 125°C

0.1

C_j

Typical Junction Capacitance (Note 2)

400

2.5

°C/W

V/ms

°C

R_qJc

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (RatedV_R)

dV/dt

T_j,T_STG

1000

Operating and Storage Temperature Range

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS23009 Rev. G-2

1 of 2

MBR1030-MBR1060

中文翻译

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