MBR1040 THRU MBR10200
10A High Barrier Power Schottky
Rectifiers - 40V-200V
Features
• 150°C operating junction temperature.
• Low power loss, high efficiency.
• High current capability
Package outline
TO-220AC
• High surge capability.
0.419(10.66)
0.387(9.85)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
• Guardring for overvoltage protection.
• Low stored charge majority carrier conduction
• Silicon epitaxial planar chip, metal silicon junction.
0.269(6.85)
0.226(5.75)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.624(15.87)
0.548(13.93)
0.139(3.55)
MIN
• Suffix "-H" indicates Halogen-free parts, ex. ΜΒR1040-H.
0.177(4.50)MAX
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.038(0.96)
0.019(0.50)
0.50(12.70)MIN
.025(0.65)MAX
• Case : JEDEC TO-220AC molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
0.1(2.54)
• Polarity: As marked
• Mounting Position : Any
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
Symbol
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
IO
10.0
Forward rectified current
See Fig.1
8.3ms single half sine-wave
(JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
IFSM
150
Forward surge current
Reverse current
A
0.1
15
IR
mA
OC/W
OC
RθJC
TSTG
Thermal resistance
Junction to case
2.0
Storage temperature range
+175
-65
Operating
*1
*3
VR
(V)
*4
*2
VRMS
(V)
temperature
VF
SYMBOLS
VRRM
(V)
TJ, (OC)
(V)
40
28
40
MBR1040
MBR1045
MBR1050
MBR1060
MBR1080
MBR10100
MBR10150
MBR10200
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.70
45
31.5
35
45
50
50
0.80
*3 Continuous reverse voltage
60
42
60
-55 to +150
80
56
80
*4 Maximum forward voltage, @IF=10A, 25°C
0.85
0.95
100
150
200
70
100
150
200
105
140
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
AS-3060039
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
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