Datasheet > MBR(F,B)15H35CT thru MBR(F,B)15H60CT

MBR(F,B)15H35CT thru MBR(F,B)15H60CT

更新时间： 2024-09-17 14:55:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	83K
描述
Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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MBR(F,B)15H35CT thru MBR(F,B)15H60CT 数据手册

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MBRB15H45CT

Vishay General Semiconductor

www.vishay.com

Dual Common Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

D²PAK (TO-263AB)

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBRB15H45CT

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

PIN 1

PIN 2

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

3D Models

MECHANICAL DATA

Case: D²PAK (TO-263AB)

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101

qualified

I_F(AV)

V_RRM

I_FSM

V_F

2 x 7.5 A

45 V

150 A

0.55 V

50 μA

175 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

I_R

HM3 suffix meets JESD 201 class 2 whisker test

T_Jmax.

D²PAK (TO-263AB)

Polarity: as marked

Package

Circuit configuration

Common cathode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBRB15H45CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

7.5

V_RWM

V_DC

Maximum DC blocking voltage

total device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Non-repetitive avalanche energy at 25 °C, I_AS= 4 A, L = 10 mH per diode

E_AS

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated

load per diode

I_FSM

150

Peak repetitive reverse surge current per diode at t_p= 2.0 μs, 1 kHz

Peak non-repetitive reverse energy (8/20 μs waveform)

I_RRM

1.0

E_RSM

Electrostatic discharge capacitor voltage

Human body model: C = 100 F, R = 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

Revision: 25-Oct-2023

Document Number: 88782

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBR(F,B)15H35CT thru MBR(F,B)15H60CT相关器件

型号	品牌	获取价格	描述	数据表
MBR030	MOTOROLA	获取价格	Schottky rectifiers
MBR030AHX	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM),
MBR030HX	MOTOROLA	获取价格	RECTIFIER DIODE,SCHOTTKY,30V V(RRM),DO-204AH
MBR030HXV	MOTOROLA	获取价格	RECTIFIER DIODE,SCHOTTKY,30V V(RRM),DO-204AH
MBR040	MOTOROLA	获取价格	Schottky rectifiers
MBR040	NJSEMI	获取价格	Diode Schottky 40V 0.5A 2-Pin SOD-123 T/R
MBR040AHX	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM),
MBR040HX	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM),
MBR040HXV	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM),
MBR050	ONSEMI	获取价格	High Efficiency DC-DC Converters

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