Datasheet > MBN1200D33A

MBN1200D33A

更新时间： 2024-11-09 20:05:51

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网栅双极性晶体管功率控制
页数	文件大小	规格书
4页	68K
描述
1200A, 3300V, N-CHANNEL IGBT

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技术参数
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MBN1200D33A 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.68	最大集电极电流 (IC)：	1200 A
集电极-发射极最大电压：	3300 V	门极-发射极最大电压：	20 V
元件数量：	1	最高工作温度：	125 °C
最大功率耗散 (Abs)：	12000 W	子类别：	Insulated Gate BIP Transistors
VCEsat-Max：	5 V	Base Number Matches：	1

MBN1200D33A 数据手册

IGBT MODULE

MBN1200D33A

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

FEATURES

High thermal fatigue durability.

(delta Tc=70 C,N 20,000cycles)

low noise due to built-in free-wheeling

diode - ultra soft fast recovery diode(USFD).

High speed,low loss IGBT module.

Low driving power due to low input

capacitance MOS gate.

6-M8

3-M4

8-φ7

High reliability,high durability module.

Isolated head sink (terminal to base).

TERMINALS

Weight: 1,200 (g)

°C

ABSOLUTE MAXIMUM RATINGS (Tc=25

)

Item

Symbol

V_CES

Unit

MBN1200D33A

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

3,300

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

±20

1,200

2,400

1,200

1ms

Forward Current

1ms

2,400

12,000

-40 ~ +125

5,400(AC 1 minute)

2/10

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

°C

V_RMS

(M4/M8)

Screw Torque

Terminals

(1)

(2)

N.m

(M6)

Mounting

Notes: (1)Recommended Value 1.8±0.2/9±1N.m

(2)Recommended Value 5.5±0.5N.m

°C

CHARACTERISTICS (Tc=25

)

Item

Symbol Unit

Min. Typ. Max.

Test Conditions

Collector Emitter Cut-Off Current

I _CES

12.0 V_CE=3,300V,V_GE=0V

Gate Emitter Leakage Current

I_GES

±500 V_GE=±20V,V_CE=0V

5.0 I_C=1,200A,V_GE=15V

7.0 V_CE=10V, I_C=1,200mA

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

V_CE(sat)

V_GE(TO)

C_ies

t_r

t_on

4.1

5.5

150

1.6

2.3

2.4

4.0

V_CE=10V,V_GE=0V,f=100KHz

Rise Time

2.6 V_CC=1,650V,Ic=1,200A

3.2 L=100nH

Turn On Time

Switching Times

Fall Time

t_f

3.2 R_G=3.3W

(3)

Turn Off Time

Peak Forward Voltage Drop

t_off

V_FM

3.9

2.8

5.6 V_GE=±15V Tc=125°C

3.7 -Ic=1,200A,V_GE=0V

Reverse Recovery Time

t_rr

0.8

1.4 Vcc=1,650V,-Ic=1,200A,L=100nH,

Tc=125°C (4)

Thermal Impedance

IGBT

FWD

Rth(j-c)

°C/W

0.008

0.016

Junction to case

Notes:(3) R_Gvalue is the test condition’s value for decision of the switching times, not recommended value.

Determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage,etc.)with appliance mounted.

(4) Counter arm IGBT

V_GE=-15V

PDE-N1200D33A-0

12 3 4

中文翻译

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与MBN1200D33A相关器件

型号	品牌	获取价格	描述	数据表
MBN1200D33C	RENESAS	获取价格	1200A, 3300V, N-CHANNEL IGBT, MODULE-9
MBN1200E17D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES
MBN1200E25C	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES
MBN1200E33C	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
MBN1200E33D	RENESAS	获取价格	1200A, 3300V, N-CHANNEL IGBT, MODULE-9
MBN1200E33D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200E33E	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200GR12A	RENESAS	获取价格	1200 A, 1200 V, N-CHANNEL IGBT
MBN1200GS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
MBN1200H33D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES

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