Datasheet > MBN1200E17D

MBN1200E17D

更新时间： 2024-11-20 20:44:23

品牌	Logo	应用领域
日立 - HITACHI		栅
页数	文件大小	规格书
1页	139K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES

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MBN1200E17D 数据手册

Spec.No.IGBT-SP-03007 R3

IGBT MODULE

PRELIMINARY SPEC.

MBN1200E17D

∗ High speed, low loss IGBT module.

∗ Low driving power due to low input

capacitance MOS gate.

Silicon N-channel IGBT

OUTLINE DRAWING

FEATURES

Unit in mm

∗ Low noise due to ultra soft fast recovery diode.

∗ High reliability, high durability module.

∗ High thermal fatigue durability.

(delta Tc=70°C, N>30,000cycles)

∗ Isolated heat sink (terminal to base).

CIRCUIT DIAGRAM

Weight : 1,100(g)

ABSOLUTE MAXIMUM RATINGS (Tc=25^oC )

Item

Symbol

Unit

MBN1200E17D

1,700

Collector Emitter Voltage

Gate Emitter Voltage

V_CES

V_GES

I_C

±20

1ms

1,200

Collector Current

I_Cp

I_F

I_FM

T_j

2,400

1,200

Forward Current

1ms

2,400

Junction Temperature

Storage Temperature

Isolation Voltage

^oC

-40 ~ +125

4,000(AC 1 minute)

T_stg

V_ISO

V_RMS

Terminals (M4/M8)

Mounting (M6)

2/10

(1)

(2)

Screw Torque

N·m

Notes: (1) Recommended Value 1.8±0.2/9±1N·m

ELECTRICAL CHARACTERISTICS

(2) Recommended Value 5.5±0.5N·m

Item

Symbol Unit Min. Typ. Max.

Test Conditions

10 V_CE=1,700V, V_GE=0V, Tj=25^oC

35 V_CE=1,700V, V_GE=0V, Tj=125^oC

+500 V_GE=±20V, V_CE=0V, Tj=25^oC

3.3 I_C=1,200A, V_GE=15V, Tj=125^oC

8.5 V_CE=10V, I_C=120mA, Tj=25^oC

Collector Emitter Cut-Off Current

I _CES

Gate Emitter Leakage Current

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

I_GES

V_CE(sat)

V_GE(TO)

C_ies

-500

5.5

2.7

7.0

100

0.8

0.6

0.9

0.3

1.4

1.9

0.5

0.2

0.3

0.4

V_CE=10V, V_GE=0V, f=100kHz, Tj=25^oC

Internal Gate Resistance

Rise Time

Rge

t_r

1.0

1.8

0.7

3.4

V_CC=900V, Ic=1,200A

L=65nH,C_GE=120nF(TBD) (3)

Turn On Time

t_on

Switching Times

µs

R_G=1.5Ω(TBD) (3)

Fall Time

t_f

_GE=±15V, Tj=125^oC

Turn Off Time

Peak Forward Voltage Drop

Reverse Recovery Time

Turn On Loss

t_off

V_FM

2.5 Ic=1,200A, V_GE=0V, Tj=125^oC

t_rr

µs

1.0

0.3

0.4

0.6

V_CC=900V, Ic=1,200A

L=65nH,C_GE=120nF(TBD) (3)

E_on(10%)

E_off(10%)

E_rr(10%)

LSCE

Rth(j-c)

J/P

R_G=1.5Ω(TBD) (3)

Turn Off Loss

_GE=±15V, Tj=125^oC

Reverse Recovery Loss

Stray inductance module

IGBT

Thermal Impedance

FWD

0.018

0.030

^oC/W

Junction to case

Case to fin

Contact Thermal Impedance

Rth(c-f) ^oC/W

0.008

Notes:(3) R_Gand C_GEvalue is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R_Gand C_GEvalue after the measurement of switching waveforms

(overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

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与MBN1200E17D相关器件

型号	品牌	获取价格	描述	数据表
MBN1200E25C	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES
MBN1200E33C	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
MBN1200E33D	RENESAS	获取价格	1200A, 3300V, N-CHANNEL IGBT, MODULE-9
MBN1200E33D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200E33E	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200GR12A	RENESAS	获取价格	1200 A, 1200 V, N-CHANNEL IGBT
MBN1200GS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
MBN1200H33D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200H45E2	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES
MBN125SS1W01-BA	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V

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