Datasheet > MBN1200E33D

MBN1200E33D

更新时间： 2024-11-20 14:53:07

品牌	Logo	应用领域
日立 - HITACHI		栅
页数	文件大小	规格书
2页	56K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES

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MBN1200E33D 数据手册

Relation No.IGBT-SP-02005 R5

IGBT MODULE

TENTATIVE SPECIFICATION

MBN1200E33D

Silicon N-channel IGBT

OUTLINE DRAWING

FEATURES

Unit in mm

∗ High speed, low loss IGBT module.

∗ Low driving power due to low input

capacitance MOS gate.

∗ Low noise due to ultra soft fast recovery diode.

∗ High reliability, high durability module.

∗ High thermal fatigue durability.

(delta Tc=70°C, N>30,000cycles)

∗ Isolated head sink (terminal to base).

CIRCUIT DIAGRAM

TERMINALS

Weight : 1300(g)

ABSOLUTE MAXIMUM RATINGS (Tc=25^oC )

Item

Symbol

Unit

MBN1200E33D

3,300

Collector Emitter Voltage

Gate Emitter Voltage

V_CES

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

±20

1,200

2,400

1,200

1ms

Collector Current

Forward Current

1ms

2,400

Junction Temperature

Storage Temperature

Isolation Voltage

^oC

-40 ~ +125

6,000(AC 1 minute)

V_RMS

Terminals (M4/M8)

Mounting (M6)

2/10

(1)

(2)

Screw Torque

N·m

Notes: (1) Recommended Value 1.8±0.2/9±1N·m

(2) Recommended Value 5.5±0.5N·m

ELECTRICAL CHARACTERISTICS

Item

Symbol Unit Min. Typ. Max.

Test Conditions

12 V_CE=3,300V, V_GE=0V, Tj=25^oC

60 V_CE=3,300V, V_GE=0V, Tj=125^oC

+500 V_GE=±20V, V_CE=0V, Tj=25^oC

5.2 I_C=1,200A, V_GE=15V, Tj=125^oC

7.0 V_CE=10V, I_C=1,200mA, Tj=25^oC

Collector Emitter Cut-Off Current

I _CES

Gate Emitter Leakage Current

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

Internal Gate Resistance

Rise Time

I_GES

V_CE(sat)

V_GE(TO)

C_ies

Rge

t_r

t_on

t_f

t_off

V_FM

Ω

-500

4.5

4.2

6.0

110

1.2

1.9

2.4

1.0

3.0

2.5

V_CE=10V, V_GE=0V, f=100kHz, Tj=25^oC

3.1 V_CC=1,650V, Ic=1,200A

3.3 L=100nH

Turn On Time

Fall Time

Turn Off Time

Switching Times

µs

2.5 R_G=3.3Ω (3)

5.1 V_GE=±15V, Tj=125^oC

3.0 Ic=1,200A, V_GE=0V, Tj=125^oC

Peak Forward Voltage Drop

Vcc=1,650V, Ic=1,200A, L=100nH

Reverse Recovery Time

t_rr

µs

0.6

1.1

Tj=125^oC

Turn On Loss

Turn Off Loss

Reverse Recovery Loss

Stray inductance module

IGBT

Thermal Impedance

FWD

E_on(10%)

E_off(10%)

E_rr(10%)

LSCE

J/P

1.6

1.3

1.2

2.1 V_CC=1,650V, Ic=1,200A, L=100nH

R_G=3.3Ω (3)

1.7

1.9

_GE=±15V, Tj=125^oC

Rth(j-c)

0.0085

0.017

^oC/W

Junction to case

Case to fin

Contact Thermal Impedance

Rth(c-f) ^oC/W

0.006

Notes:(3) R_Gvalue is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

PDE-N1200E33D-5

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与MBN1200E33D相关器件

型号	品牌	获取价格	描述	数据表
MBN1200E33E	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200GR12A	RENESAS	获取价格	1200 A, 1200 V, N-CHANNEL IGBT
MBN1200GS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
MBN1200H33D	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
MBN1200H45E2	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES
MBN125SS1W01-BA	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V
MBN125SS1W01-BC	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V
MBN125SS1W01-BF	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V
MBN125SS1W01-BG	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V
MBN125SS1W01-CA	NKK	获取价格	SWITCH PUSHBUTTON SPDT 3A 125V

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