Datasheet > MBN1200GS12AW

MBN1200GS12AW

更新时间： 2024-02-13 16:49:10

品牌	Logo	应用领域
日立 - HITACHI		栅
页数	文件大小	规格书
5页	343K
描述
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES

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数据手册

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MBN1200GS12AW 数据手册

Date:Mar.2002

Status List

M:Mass production A:Abolition

GR - A Series (Advanced GR Series)

KS02007

Absolute Maximum Ratings

Characteristics

Outline

Connection

Type

Status

CES

CE(sat)

off

(V)

(A)

1,200

600

400

300

200

150

100

(W)

8,330

3,790

2,500

1,980

1,250

1,000

690

(V)Typ.

2.4

( s)Max. ( s)Max. ( s)Max.

µ µ µ

MBN1200GR12A

MBN600GR12A

MBN400GR12A

MBM300GR12A

MBM200GR12A

MBM150GR12A

MBM100GR12A

1,200

2.1

0.8

0.7

0.6

1.8

1.2

1.1

1.0

0.4

0.35

0.3

N - 7

N - 6

N - 5

M - 9

M - 8

Single

2.2

Dual

2.2

GR Series

Absolute Maximum Ratings

Characteristics

Connection

Type

Outline

Status

CES

CE(sat)

off

(V)

(A)

(W)

1,170

930

(V)Typ.

2.1

( s)Max. ( s)Max. ( s)Max.

µ µ µ

MBM400GR6

MBM300GR6

MBM200GR6

MBM150GR6

600

400

300

200

150

0.7

1.1

1.0

0.8

0.32

0.3

M - 3

M - 8

2.1

Dual

690

2.1

520

2.1

0.3

GS Series

Absolute Maximum Ratings

Characteristics

Connection

Type

Outline

Status

CES

CE(sat)

off

(V)

(A)

(W)

1,700

1,000

1,470

800

(V)Typ.

1.9

( s)Max. ( s)Max. ( s)Max.

µ µ µ

Dual

MBM600GS6CW

MBM400GS6AW

MBM400JS6AW

MBM300GS6AW

MBM200GS6AW

MBM150GS6AW

MBB200GS6AW

600

400

300

200

150

200

0.8

0.7

0.6

1.1

0.9

0.4

M - 7

M - 1

M - 3

M - 1

M - 6

B - 1

1.9

0.35

1.9

600

1.9

450

1.9

Six - Pack

600

1.9

12 3 4 5

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