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MBM29DL162TD12PBT PDF预览

MBM29DL162TD12PBT

更新时间: 2024-11-20 14:43:27
品牌 Logo 应用领域
富士通 - FUJITSU 可编程只读存储器内存集成电路
页数 文件大小 规格书
76页 1146K
描述
1MX16 FLASH 3V PROM, 120ns, PBGA48, PLASTIC, FBGA-48

MBM29DL162TD12PBT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:48Reach Compliance Code:unknown
风险等级:5.25最长访问时间:120 ns
备用内存宽度:8JESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:9 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

MBM29DL162TD12PBT 数据手册

 浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第2页浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第3页浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第4页浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第5页浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第6页浏览型号MBM29DL162TD12PBT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20874-4E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTD/BD-70/90/12  
FEATURES  
• 0.33 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL16XTD/MBM29DL16XBD  
+0.3 V  
–0.3 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
70  
70  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-48P-M13)  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

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MBM29DL162TD-12PBT SPANSION

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Flash, 1MX16, 120ns, PBGA48,
MBM29DL162TD-12PFTN FUJITSU

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TD-70PFTR SPANSION

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TD-90PBT SPANSION

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TD-90PFTN SPANSION

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TD-90PFTR SPANSION

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation