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MBM29DL162TD-70PBT PDF预览

MBM29DL162TD-70PBT

更新时间: 2024-11-20 02:57:43
品牌 Logo 应用领域
飞索 - SPANSION 闪存内存集成电路
页数 文件大小 规格书
74页 1090K
描述
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

MBM29DL162TD-70PBT 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20874-7E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTD/BD-70/90  
FEATURES  
• 0.33 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”  
in GENERAL DESCRIPTION)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
MBM29DL16XTD/MBM29DL16XBD  
+0.3 V  
–0.3 V  
VCC = 3.3 V  
VCC = 3.0 V  
70  
70  
70  
30  
90  
90  
90  
35  
Ordering Part No.  
+0.6 V  
–0.3 V  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (1)  
48-pin plastic TSOP (1)  
48-ball plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(BGA-48P-M13)  
(FPT-48P-M20)  

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