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MBM29DL162TE-70PBT PDF预览

MBM29DL162TE-70PBT

更新时间: 2024-11-20 21:13:31
品牌 Logo 应用领域
富士通 - FUJITSU 内存集成电路闪存
页数 文件大小 规格书
75页 322K
描述
Flash, 1MX16, 70ns, PBGA48, PLASTIC, FBGA-48

MBM29DL162TE-70PBT 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:PLASTIC, FBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.24最长访问时间:70 ns
备用内存宽度:8启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

MBM29DL162TE-70PBT 数据手册

 浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第2页浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第3页浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第4页浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第5页浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第6页浏览型号MBM29DL162TE-70PBT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20880-1E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTE/BE-70/90/12  
FEATURES  
• 0.23 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL16XTE/BE  
+0.3 V  
–0.3 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
70  
70  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  
(BGA-48P-M11)  

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Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL162TE-70TN-E1 SPANSION

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MBM29DL162TE70TR FUJITSU

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16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TE-70TR SPANSION

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TE-70TR-E1 SPANSION

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Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48