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MBM29DL163BD-90PFTN

更新时间： 2024-11-24 05:22:31

品牌	Logo	应用领域
飞索 - SPANSION		闪存
页数	文件大小	规格书
74页	1090K
描述
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

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中文翻译

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数据手册

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MBM29DL163BD-90PFTN 数据手册

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20874-7E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT ^{Dual Operation}

MBM29DL16XTD/BD^-70/90

■ FEATURES

• 0.33 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

in ■GENERAL DESCRIPTION)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

(Continued)

■ PRODUCT LINE UP

Part No.

MBM29DL16XTD/MBM29DL16XBD

+0.3 V

–0.3 V

V^CC= 3.3 V

V^CC= 3.0 V

—

Ordering Part No.

+0.6 V

–0.3 V

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (1)

48-ball plastic FBGA

Marking Side

(FPT-48P-M19)

(BGA-48P-M13)

(FPT-48P-M20)

12 3 4 5 6 7...74

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与MBM29DL163BD-90PFTN相关器件

型号	品牌	获取价格	描述	数据表
MBM29DL163BD-90PFTR	SPANSION	获取价格	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163BD-90PFTR	FUJITSU	获取价格	Flash, 1MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL163BE	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163BE-12	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163BE12PBT	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48,
MBM29DL163BE-12PBT	FUJITSU	获取价格	Flash, 1MX16, 12ns, PBGA48, PLASTIC, FBGA-48
MBM29DL163BE12TN	CYPRESS	获取价格	Flash, 1MX16, 120ns, PDSO48,
MBM29DL163BE12TR	CYPRESS	获取价格	Flash, 1MX16, 120ns, PDSO48
MBM29DL163BE-12TR	FUJITSU	获取价格	Flash, 1MX16, 12ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL163BE-70	FUJITSU	获取价格	16M (2M X 8/1M X 16) BIT Dual Operation