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MB84VD22183EE-90 PDF预览

MB84VD22183EE-90

更新时间: 2024-11-22 22:14:03
品牌 Logo 应用领域
富士通 - FUJITSU 存储
页数 文件大小 规格书
61页 1478K
描述
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD22183EE-90 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50204-2E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
32M (× 8/×16) FLASH MEMORY &  
4M (× 8/×16) STATIC RAM  
MB84VD2218XEC-90/MB84VD2219XEC-90  
MB84VD2218XEE-90/MB84VD2219XEE-90  
FEATURES  
• Power supply voltage of 2.7 to 3.3 V  
• High performance  
90 ns maximum access time (Flash)  
85 ns maximum access time (SRAM)  
• Operating Temperature  
–25 to +85°C  
• Package 73-ball BGA  
(Continued)  
PRODUCT LINE UP  
Flash Memory  
SRAM  
+0.3 V  
–0.3 V  
Ordering Part No.  
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90  
VCCf, VCCs = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
90  
90  
40  
85  
85  
45  
PACKAGE  
73-ball plastic BGA  
(BGA-73P-M01)  

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