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MB84VD22183EH-90 PDF预览

MB84VD22183EH-90

更新时间: 2024-11-22 22:14:03
品牌 Logo 应用领域
富士通 - FUJITSU 存储
页数 文件大小 规格书
63页 1270K
描述
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD22183EH-90 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50206-1E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
32M (× 8/×16) FLASH MEMORY &  
4M (× 8/×16) STATIC RAM  
MB84VD2218XEG-90/MB84VD2219XEG-90  
MB84VD2218XEH-90/MB84VD2219XEH-90  
FEATURES  
• Power supply voltage of 2.7 V to 3.3 V  
• High performance  
90 ns maximum access time (Flash)  
85 ns maximum access time (SRAM)  
• Operating Temperature  
–25°C to +85°C  
• Package 71-ball BGA  
(Continued)  
PRODUCT LINE UP  
Flash Memory  
SRAM  
+0.3 V  
–0.3 V  
Ordering Part No.  
MB84VD2218XEG/EH-90/MB84VD2219XEG/EH-90  
VCCf,VCCs = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
90  
90  
40  
85  
85  
45  
PACKAGE  
71-ball plastic FBGA  
(BGA-71P-M02)  

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