MB2M-MB10M
SILICON BRIDGE RECTIFIERS
MBM
Dim
A
B
C
E
F
Min
Max
4.80
3.80
2.65
0.35
5.20
0.80
6.30
2.70
5.90
A
4.40
FEATURES
+
-
3.40
2.35
~
~
z
z
z
z
z
z
Glass passivated chip junctions
0.15
L
4.60
High surge overload rating: 35A peak
I
0.50
I
E
J
5.70
Saves space on printed circuit boards
K
L
2.30
5.40
K
J
Plastic material has U/L flammability classification94V-O
All Dimensions in mm
This series is UL recognized under Component Index, file number E239431
High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
z
Case: Molded plastic body over passivated junctions
z
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
MB2M
MB4M
MB6M
MB8M
MB10M
UNITS
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
0.51)
0.82)
800
560
800
1000
700
V
V
V
DC Blocking Voltage
1000
Maximum average forward Output current
IF(AV)
A
@TA=25℃
Peak forward surge current 8.3ms single half-sine-
IFSM
35
A
wave superimposed on rated load
Current squared time t < 8.3ms , Ta = 25℃
I2t
5.1
A2s
Thermal Characteristics
Characteristic
Symbol
MB2M
MB4M
MB6M
MB8M
MB10M
UNITS
Typical junction capacitance per leg (NOTE 3)
CJ
13
p F
Typical thermal resistance per leg
(NOTE 1)
(NOTE 2)
R ΘJA
R θ JL
TJ
85
℃/W
20
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
- 55 ---- + 150
℃
℃
TSTG
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
MB2M
MB4M
MB6M
MB8M
MB10M
UNITS
Maximum instantaneous forward voltage at 0.4 A
VF
1.0
V
Maximum reverse current @TA=25℃
5.0
IR
μ A
at rated DC blocking voltage @TA=125℃
100
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
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Revision:20170701-P1