是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
风险等级: | 5.25 | Is Samacsys: | N |
最大击穿电压: | 147 V | 最小击穿电压: | 133 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 100000 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.61 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 120 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MART100KP120E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP120TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 120V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP130A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP130AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP130AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP130AE3TR | MICROSEMI |
获取价格 |
100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN | |
MART100KP130ATR | MICROSEMI |
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100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2 | |
MART100KP130ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP130CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MART100KP130CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, P |