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MART100KP160AE3TR

更新时间： 2024-11-05 21:09:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管电视
页数 文件大小 规格书
5页 260K
描述
100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

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中文翻译

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MART100KP160AE3TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.74其他特性：HIGH RELIABILITY
最大击穿电压：197 V最小击穿电压：178 V
击穿电压标称值：187.5 V外壳连接：ISOLATED
最大钳位电压：315 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：100000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
认证状态：Not Qualified最大重复峰值反向电压：160 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MART100KP160AE3TR 数据手册

 浏览型号MART100KP160AE3TR的Datasheet PDF文件第2页浏览型号MART100KP160AE3TR的Datasheet PDF文件第3页浏览型号MART100KP160AE3TR的Datasheet PDF文件第4页浏览型号MART100KP160AE3TR的Datasheet PDF文件第5页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Unidirectional and Bidirectional  
Transient Voltage Suppressor  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 40 to 400 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MRT100KP40A thru MRT100KP400CA, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 100 kW @ 6.4/69 µs  
Fast response with less than 5ns turn-on time  
Preferred 100kW TVS for aircraft power bus protection  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 5A  
APPLICATIONS / BENEFITS  
.
Protection from high power switching transients, induced RF, and lightning threats with  
comparatively small package size (0.25 inch diameter)  
.
.
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all  
devices  
.
.
.
.
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device  
types MRT100KP33A or CA up to MRT100KP260A or CA  
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all  
devices  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on  
device types MRT100KP33A or CA up to MRT100KP64A or CA  
Consult Factory for other voltages with similar Peak Pulse Power capabilities  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1  
and 2)  
impulse repetition rate (duty factor) of 0.005 %  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 °C  
Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1 oz ) and track width 1 mm, length 25  
mm  
.
Steady-state power dissipation: 7 Watts @ TL = 27.5 °C or 1.61 Watts at TA = 25 °C when  
mounted on FR4 PC Board described above for thermal resistance  
.
.
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01012 Rev A, August 2010  
High Reliability Product Group  
Page 1 of 5  
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 		Trans Voltage Suppressor Diode, 100000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, P
MART100KP160CA/TR MICROSEMI

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MART100KP160CAE3/TR MICROSEMI

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MART100KP160CAE3TR MICROSEMI

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 		100000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MART100KP160CATR MICROSEMI

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 		100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2
MART100KP160CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, R
MART100KP160TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 160V V(RWM), Unidirectional, 1 Element, Silicon,
MART100KP170A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 170V V(RWM), Unidirectional, 1 Element, Silicon,
MART100KP170AE3TR MICROSEMI

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 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
MART100KP170ATR MICROSEMI

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 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2

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