是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
风险等级: | 5.27 | 最大击穿电压: | 209 V |
最小击穿电压: | 189 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 100000 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.61 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500 |
最大重复峰值反向电压: | 170 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MART100KP170CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, R | |
MART100KP170CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MART100KP170E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP180A/TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP180AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP180AE3TR | MICROSEMI |
获取价格 |
100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN | |
MART100KP180ATR | MICROSEMI |
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100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2 | |
MART100KP180ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, | |
MART100KP180CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MART100KP180CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Bidirectional, 1 Element, Silicon, P |