MAC4DSN-001

更新时间： 2024-01-29 10:14:05

品牌	Logo	应用领域
安森美 - ONSEMI		三端双向交流开关
页数	文件大小	规格书
8页	84K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

获取价格

数据手册
替代型号

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MAC4DSN-001 数据手册

MAC4DSM, MAC4DSN

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

Features

TRIACS

4.0 AMPERES RMS

600 − 800 VOLTS

• Small Size Surface Mount DPAK Package

• Passivated Die for Reliability and Uniformity

• Blocking Voltage to 800 V

• On−State Current Rating of 4.0 Amperes RMS at 108°C

• Low IGT − 10 mA Maximum in 3 Quadrants

• High Immunity to dv/dt − 50 V/ꢀ s at 125°C

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MT2

MT1

MARKING

DIAGRAMS

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DPAK

CASE 369C

STYLE 6

YWW

4DSxG

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage

DRM,

(Note 1) (T = −40 to 125°C, Sine

RRM

Wave, 50 to 60 Hz, Gate Open)

MAC4DSM

MAC4DSN

600

800

DPAK−3

CASE 369D

STYLE 6

YWW

4DSxG

On−State RMS Current

(Full Cycle Sine Wave, 60 Hz,

= 108°C)

4.0

T(RMS)

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

T = 125°C)

TSM

= Year

= Work Week

AC4DSx = Device Code

x= M or N

Circuit Fusing Consideration

(t = 8.3 msec)

I t

6.6

0.5

0.1

0.2

5.0

A sec

= Pb−Free Package

Peak Gate Power

(Pulse Width ≤ 10 ꢀ sec, T = 108°C)

Average Gate Power

G(AV)

PIN ASSIGNMENT

Main Terminal 1

Main Terminal 2

Gate

(t = 8.3 msec, T = 108°C)

Peak Gate Current

(Pulse Width ≤ 10 ꢀ sec, T = 108°C)

Peak Gate Voltage

(Pulse Width ≤ 10 ꢀ sec, T = 108°C)

Main Terminal 2

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−40 to 150

°C

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Preferred devices are recommended choices for future use

and best overall value.

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 5

MAC4DSM/D

12 3 4 5 6 7 8

中文翻译

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MAC4DSN-001 替代型号

型号	品牌	替代类型	描述	数据表
MAC4DSN-1G	ONSEMI	完全替代	4.0 A Sensitive Gate Triac, DPAK INSERTION MOUNT, 75-TUBE
MAC4DSN-1G	LITTELFUSE	类似代替	TRIAC, 800V V(DRM), 4A I(T)RMS, DPAK-3

与MAC4DSN-001相关器件

型号	品牌	获取价格	描述	数据表
MAC4DSN-001G	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSN-1	ONSEMI	获取价格	800V, 4A, TRIAC, CASE 369, DPAK-3
MAC4DSN-1G	LITTELFUSE	获取价格	TRIAC, 800V V(DRM), 4A I(T)RMS, DPAK-3
MAC4DSN-1G	ONSEMI	获取价格	4.0 A Sensitive Gate Triac, DPAK INSERTION MOUNT, 75-TUBE
MAC4DSNT4	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSNT4	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 4A I(T)RMS, DPAK-3
MAC4DSNT4G	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSNT4G	LITTELFUSE	获取价格	该三端双向可控硅专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光
MAC4M	ONSEMI	获取价格	TRIACS, Silicon Bidirectional Thyristors
MAC4MG	ONSEMI	获取价格	600V, 4A, TRIAC, TO-220AB, CASE 221A-09, 3 PIN

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