MAC4DSM, MAC4DSN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
Features
TRIACS
4.0 AMPERES RMS
600 − 800 VOLTS
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
• Blocking Voltage to 800 V
• On−State Current Rating of 4.0 Amperes RMS at 108°C
• Low IGT − 10 mA Maximum in 3 Quadrants
• High Immunity to dv/dt − 50 V/ꢀ s at 125°C
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MT2
MT1
G
MARKING
DIAGRAMS
• Pb−Free Packages are Available
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
DPAK
CASE 369C
STYLE 6
J
YWW
AC
4DSxG
Rating
Symbol
Value
Unit
2
1
Peak Repetitive Off−State Voltage
V
V
3
DRM,
(Note 1) (T = −40 to 125°C, Sine
V
RRM
J
Wave, 50 to 60 Hz, Gate Open)
4
MAC4DSM
MAC4DSN
600
800
DPAK−3
CASE 369D
STYLE 6
YWW
AC
4DSxG
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz,
= 108°C)
I
4.0
A
A
T(RMS)
1
T
C
2
3
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T = 125°C)
J
I
TSM
40
Y
WW
= Year
= Work Week
AC4DSx = Device Code
x= M or N
2
2
Circuit Fusing Consideration
(t = 8.3 msec)
I t
6.6
0.5
0.1
0.2
5.0
A sec
G
= Pb−Free Package
Peak Gate Power
P
W
W
A
GM
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)
C
Average Gate Power
P
G(AV)
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
(t = 8.3 msec, T = 108°C)
C
1
Peak Gate Current
I
GM
2
3
4
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)
C
Peak Gate Voltage
V
V
GM
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)
C
Main Terminal 2
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to 125
−40 to 150
°C
°C
J
T
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred devices are recommended choices for future use
and best overall value.
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2005 − Rev. 5
MAC4DSM/D