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MAC4DSNT4G

更新时间： 2024-01-04 08:11:42
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关
页数 文件大小 规格书
8页 84K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC4DSNT4G 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：1.53Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：4 A断态重复峰值电压：800 V
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：TRIACBase Number Matches：1

MAC4DSNT4G 数据手册

 浏览型号MAC4DSNT4G的Datasheet PDF文件第2页浏览型号MAC4DSNT4G的Datasheet PDF文件第3页浏览型号MAC4DSNT4G的Datasheet PDF文件第4页浏览型号MAC4DSNT4G的Datasheet PDF文件第5页浏览型号MAC4DSNT4G的Datasheet PDF文件第6页浏览型号MAC4DSNT4G的Datasheet PDF文件第7页 
MAC4DSM, MAC4DSN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
Features  
TRIACS  
4.0 AMPERES RMS  
600 − 800 VOLTS  
• Small Size Surface Mount DPAK Package  
• Passivated Die for Reliability and Uniformity  
• Blocking Voltage to 800 V  
• On−State Current Rating of 4.0 Amperes RMS at 108°C  
• Low IGT − 10 mA Maximum in 3 Quadrants  
• High Immunity to dv/dt − 50 V/ꢀ s at 125°C  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MT2  
MT1  
G
MARKING  
DIAGRAMS  
• Pb−Free Packages are Available  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
DPAK  
CASE 369C  
STYLE 6  
J
YWW  
AC  
4DSxG  
Rating  
Symbol  
Value  
Unit  
2
1
Peak Repetitive Off−State Voltage  
V
V
3
DRM,  
(Note 1) (T = −40 to 125°C, Sine  
V
RRM  
J
Wave, 50 to 60 Hz, Gate Open)  
4
MAC4DSM  
MAC4DSN  
600  
800  
DPAK−3  
CASE 369D  
STYLE 6  
YWW  
AC  
4DSxG  
On−State RMS Current  
(Full Cycle Sine Wave, 60 Hz,  
= 108°C)  
I
4.0  
A
A
T(RMS)  
1
T
C
2
3
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
T = 125°C)  
J
I
TSM  
40  
Y
WW  
= Year  
= Work Week  
AC4DSx = Device Code  
x= M or N  
2
2
Circuit Fusing Consideration  
(t = 8.3 msec)  
I t  
6.6  
0.5  
0.1  
0.2  
5.0  
A sec  
G
= Pb−Free Package  
Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Average Gate Power  
P
G(AV)  
PIN ASSIGNMENT  
Main Terminal 1  
Main Terminal 2  
Gate  
(t = 8.3 msec, T = 108°C)  
C
1
Peak Gate Current  
I
GM  
2
3
4
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Peak Gate Voltage  
V
V
GM  
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the device are exceeded.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 5  
MAC4DSM/D  
 
12345678

中文翻译

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MAC4DSNT4G 替代型号

型号 品牌 替代类型 描述 数据表
MAC4DSMT4 ONSEMI

完全替代

 Triacs Silicon Bidirectional Thyristors
BT136S-800E,118 NXP

类似代替

 BT136S-800E
T410-800B-TR STMICROELECTRONICS

类似代替

 4A TRIACS

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