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MAC4N PDF预览

MAC4N

更新时间: 2024-01-04 06:25:26
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 119K
描述
TRIACS, Silicon Bidirectional Thyristors

MAC4N 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.81
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
换向电压的临界上升率-最小值:3 V/us关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:1.3 V
最大维持电流:15 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:0.01 mA元件数量:1
端子数量:3最大通态电压:1.6 V
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

MAC4N 数据手册

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Preferred Device  
Silicon Bidirectional Thyristors  
Designed for high performance full-wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
Blocking Voltage to 800 Volts  
http://onsemi.com  
On-State Current Rating of 4.0 Amperes RMS at 100°C  
Uniform Gate Trigger Currents in Three Modes  
High Immunity to dv/dt — 500 V/µs minimum at 125°C  
Minimizes Snubber Networks for Protection  
High Surge Current Capability – 40 Amperes  
Industry Standard TO-220AB Package  
TRIACS  
4 AMPERES RMS  
600 thru 800 VOLTS  
High Commutating di/dt — 6.0 A/ms minimum at 125°C  
Operational in Three Quadrants: Q1, Q2, and Q3  
Device Marking: Logo, Device Type, e.g., MAC4M, Date Code  
MT2  
MT1  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
4
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to 125°C, Sine Wave,  
V
RRM  
J
50 to 60 Hz, Gate Open)  
MAC4M  
MAC4N  
600  
800  
On-State RMS Current  
(Full Cycle Sine Wave, 60 Hz,  
= 100°C)  
I
4.0  
Amps  
Amps  
T(RMS)  
1
2
3
T
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
T = 125°C)  
J
I
40  
TO–220AB  
CASE 221A  
STYLE 4  
TSM  
2
2
Circuit Fusing Consideration  
(t = 8.33 ms)  
I t  
6.6  
0.5  
0.1  
A sec  
PIN ASSIGNMENT  
1
2
3
4
Main Terminal 1  
Peak Gate Power  
P
Watt  
Watt  
°C  
GM  
(Pulse Width 1.0 µs, T = 100°C)  
Main Terminal 2  
Gate  
C
Average Gate Power  
P
G(AV)  
(t = 8.3 ms, T = 100°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
T
J
40 to  
+125  
ORDERING INFORMATION  
Storage Temperature Range  
T
40 to  
+150  
°C  
stg  
Device  
MAC4M  
MAC4N  
Package  
TO220AB  
TO220AB  
Shipping  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Blocking  
RRM  
50 Units/Rail  
50 Units/Rail  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 1  
MAC4M/D  

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