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MAC4SM

更新时间: 2024-11-28 22:28:15
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 121K
描述
SENSITIVE GATE TRIACS

MAC4SM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.05Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE换向电压的临界上升率-最小值:3 V/us
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.3 V最大维持电流:15 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:0.01 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

MAC4SM 数据手册

 浏览型号MAC4SM的Datasheet PDF文件第2页浏览型号MAC4SM的Datasheet PDF文件第3页浏览型号MAC4SM的Datasheet PDF文件第4页浏览型号MAC4SM的Datasheet PDF文件第5页浏览型号MAC4SM的Datasheet PDF文件第6页浏览型号MAC4SM的Datasheet PDF文件第7页 
Preferred Device  
Silicon Bidirectional Thyristors  
Designed for industrial and consumer applications for full wave  
control of ac loads such as appliance controls, heater controls, motor  
controls, and other power switching applications.  
Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
http://onsemi.com  
TRIACS  
4 AMPERES RMS  
600 thru 800 VOLTS  
High Immunity to dv/dt — 50 V/ s Minimum at 125 C  
Commutating di/dt — 3.0 A/ms Minimum at 125 C  
Minimum and Maximum Values of I , V  
and I Specified for  
GT GT  
H
Ease of Design  
On-State Current Rating of 4 Amperes RMS at 100 C  
High Surge Current Capability — 40 Amperes  
Blocking Voltage to 800 Volts  
MT2  
MT1  
G
Rugged, Economical TO220AB Package  
Operational in Three Quadrants: Q1, Q2, and Q3  
Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to 125°C, Sine Wave,  
V
RRM  
J
50 to 60 Hz, Gate Open)  
1
MAC4SM  
MAC4SN  
600  
800  
2
3
TO–220AB  
CASE 221A  
STYLE 4  
On-State RMS Current  
(Full Cycle Sine Wave, 60 Hz,  
= 100°C)  
I
4.0  
Amps  
Amps  
T(RMS)  
T
C
Peak Non-Repetitive Surge Current  
I
40  
6.6  
0.5  
0.1  
TSM  
PIN ASSIGNMENT  
(One Full Cycle, 60 Hz, T = 125°C)  
J
1
2
3
4
Main Terminal 1  
2
I t  
2
Circuit Fusing Consideration  
(t = 8.33 ms)  
A sec  
Main Terminal 2  
Gate  
Peak Gate Power  
P
GM  
Watt  
Watt  
°C  
(Pulse Width 1.0 µs, T = 100°C)  
C
Main Terminal 2  
Average Gate Power  
P
G(AV)  
(t = 8.3 ms, T = 100°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
40 to  
+125  
Device  
MAC4SM  
MAC4SN  
Package  
TO220AB  
TO220AB  
Shipping  
T
stg  
40 to  
+150  
°C  
50 Units/Rail  
50 Units/Rail  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Blocking  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 1  
MAC4SM/D  

MAC4SM 替代型号

型号 品牌 替代类型 描述 数据表
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