MA740

更新时间： 2024-09-13 22:46:31

品牌	Logo	应用领域
松下 - PANASONIC		/
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2页	49K
描述
Silicon epitaxial planar type

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中文翻译

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数据手册

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MA740 数据手册

Schottky Barrier Diodes (SBD)

MA3X740

Silicon epitaxial planar type

Unit : mm

2.8 −⁺0⁰.^.3²

1.5 −⁺0⁰.^.205⁵

For super high speed switching circuit

For small current rectification

0.65 0.15

I Features

•

Two MA3X721s are contained in one package (series connec-

tion)

•

Allowing to rectify under (I_F(AV)= 200 mA) condition

(single diode value)

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_R

Rating

Unit

Reverse voltage (DC)

0.1 to 0.3

0.4 0.2

Repetitive peak reverse voltage

V_RRM

I_F(AV)

200

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

Single

Average forward

current

Double^*1ꢀ

130

JEDEC : TO-236

EIAJ : SC-59

Single

I_FM

300

Peak forward

current

Mini Type Package (3-pin)

Double^*1ꢀ

Single

220

Marking Symbol: M3C

I_FSM

Non-repetitive peak

Double^*1ꢀ

0.7

Internal Connection

forward surge current

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note)

: Value per chip

: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

I Electrical Characteristics T_a= 25°C

Parameter

Symbol

I_R

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

V_R= 30 V

µA

Forward voltage (DC)

Terminal capacitance

Reverse recovery time^*

V_F

C_t

t_rr

I_F= 200 mA

0.55

V_R= 0 V, f = 1 MHz

I_F= I_R= 100 mA

I_rr= 10 mA, R_L= 100 Ω

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

ꢀ

2. Rated input/output frequency: 1 000 MHz

3. * : t_rrmeasuring instrument

Bias Application Unit N-50BU

Input Pulse

t_p

Output Pulse

t_rr

t_r

10%

I_F

90%

V_R

I_rr= 10 mA

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 100 mA

I_R= 100 mA

R_L= 100 Ω

Pulse Generator

(PG-10N)

R_s= 50 Ω

W.F.Analyzer

(SAS-8130)

R_i= 50 Ω

中文翻译

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