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M95512-RMC3P/K PDF预览

M95512-RMC3P/K

更新时间: 2024-11-02 05:23:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 530K
描述
64KX8 SPI BUS SERIAL EEPROM, PDSO8, 2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, UFDFP-8

M95512-RMC3P/K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFP包装说明:2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, UFDFP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.66最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-N8长度:3 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:0.6 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
最长写入周期时间 (tWC):4 msBase Number Matches:1

M95512-RMC3P/K 数据手册

 浏览型号M95512-RMC3P/K的Datasheet PDF文件第2页浏览型号M95512-RMC3P/K的Datasheet PDF文件第3页浏览型号M95512-RMC3P/K的Datasheet PDF文件第4页浏览型号M95512-RMC3P/K的Datasheet PDF文件第5页浏览型号M95512-RMC3P/K的Datasheet PDF文件第6页浏览型号M95512-RMC3P/K的Datasheet PDF文件第7页 
M95512-A125  
M95512-A145  
Automotive 512-Kbit serial SPI bus EEPROMs  
with high-speed clock  
Target specification  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
SO8 (MN)  
150 mil width  
– 512 Kbits (64 Kbytes) of EEPROM  
– Page size: 128 bytes  
– Write protection by block: 1/4, 1/2 or whole  
memory  
– Additional Write lockable Page  
(Identification page)  
TSSOP8 (DW)  
169 mil width  
Extended temperature and voltage ranges  
– Up to 125 °C: 1.8 V to 5.5 V  
– Up to 145 °C: 2.5 V to 5.5 V  
High speed clock frequency  
– 20 MHz for V  
– 10 MHz for V  
4.5 V  
2.5 V  
CC ≥  
CC ≥  
– 5 MHz for V  
1.8 V  
CC ≥  
UFDFPN8 (MC)  
2 x 3 mm  
Schmitt trigger inputs for noise filtering  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
– 400 k Write cycles at 145 °C  
Data retention  
– 40 years at 55 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS-compliant and halogen-free  
®
(ECOPACK2 )  
February 2012  
Doc ID 022682 Rev 1  
1/39  
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.  
www.st.com  
1

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