Datasheet > 存储 > EEPROM> M95512-RMN3TG/AB

M95512-RMN3TG/AB

更新时间： 2024-11-01 05:47:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
48页	479K
描述
512 Kbit serial SPI bus EEPROM with high-speed clock

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中文翻译

获取价格

数据手册

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M95512-RMN3TG/AB 数据手册

M95512-DR

M95512-R M95512-W

512 Kbit serial SPI bus EEPROM

with high-speed clock

Features

■ Compatible with the Serial Peripheral Interface

(SPI) bus

■ Memory array

– 512 Kb (64 Kbytes) of EEPROM

– Page size: 128 bytes

■ Additional Write lockable Page (Identification

SO8 (MN)

150 mils width

page)

■ Write

– Byte Write within 5 ms

– Page Write within 5 ms

■ Write Protect: quarter, half or whole memory

array

TSSOP8 (DW)

169 mils width

■ High-speed clock frequency (20 MHz)

■ Single supply voltage: 1.8 V to 5.5 V

■ More than 1 Million Write cycles

■ More than 40-year data retention

■ Enhanced ESD Protection

■ Packages

UFDFPN8 (MB)

2 × 3 mm (MLP)

– ECOPACK2® (RoHS compliant and

Halogen-free)

WLCSP (CS)

September 2010

Doc ID 11124 Rev 13

1/48

www.st.com

12 3 4 5 6 7...48

中文翻译

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