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M95512-RMN3G/K PDF预览

M95512-RMN3G/K

更新时间: 2024-11-01 11:55:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
48页 479K
描述
512 Kbit serial SPI bus EEPROM with high-speed clock

M95512-RMN3G/K 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SON包装说明:0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SON-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.19最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.75 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):4 msBase Number Matches:1

M95512-RMN3G/K 数据手册

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M95512-DR  
M95512-R M95512-W  
512 Kbit serial SPI bus EEPROM  
with high-speed clock  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
– 512 Kb (64 Kbytes) of EEPROM  
– Page size: 128 bytes  
Additional Write lockable Page (Identification  
SO8 (MN)  
150 mils width  
page)  
Write  
– Byte Write within 5 ms  
– Page Write within 5 ms  
Write Protect: quarter, half or whole memory  
array  
TSSOP8 (DW)  
169 mils width  
High-speed clock frequency (20 MHz)  
Single supply voltage: 1.8 V to 5.5 V  
More than 1 Million Write cycles  
More than 40-year data retention  
Enhanced ESD Protection  
Packages  
UFDFPN8 (MB)  
2 × 3 mm (MLP)  
– ECOPACK2® (RoHS compliant and  
Halogen-free)  
WLCSP (CS)  
September 2010  
Doc ID 11124 Rev 13  
1/48  
www.st.com  
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