Datasheet > M95512-RMC6G

M95512-RMC6G

更新时间： 2023-01-02 17:02:02

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
50页	837K
描述
SPI BUS SERIAL EEPROM

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中文翻译

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数据手册

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M95512-RMC6G 数据手册

M95512-W M95512-R

M95512-DF

512-Kbit serial SPI bus EEPROM

Datasheet - production data

Features

• Compatible with the Serial Peripheral Interface

(SPI) bus

• Memory array

– 512 Kb (64 Kbytes) of EEPROM

SO8 (MN)

150 mil width

– Page size: 128 bytes

• Write

– Byte Write within 5 ms

– Page Write within 5 ms

• Additional Write lockable page (Identification

page)

TSSOP8 (DW)

169 mil width

• Write Protect: quarter, half or whole memory

array

• High-speed clock: 16 MHz

• Single supply voltage:

– 2.5 V to 5.5 V for M95512-W

– 1.8 V to 5.5 V for M95512-R

– 1.7 V to 5.5 V for M95512-DF

UFDFPN8

2 x 3 mm (MC)

• Operating temperature range: from -40°C up to

+85°C

• Enhanced ESD protection

• More than 4 million Write cycles

• More than 200-year data retention

WLCSP (CS)

• Packages

– RoHS compliant and halogen-free

(ECOPACK )

April 2014

DocID11124 Rev 22

1/50

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...50

中文翻译

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