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M68AR024DN70ZH1T PDF预览

M68AR024DN70ZH1T

更新时间: 2024-09-18 15:39:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
19页 143K
描述
1MX16 STANDARD SRAM, 70ns, PBGA48, 8 X 10 MM, 0.75 MM PITCH, TFBGA-48

M68AR024DN70ZH1T 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
长度:10 mm内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

M68AR024DN70ZH1T 数据手册

 浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第2页浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第3页浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第4页浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第5页浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第6页浏览型号M68AR024DN70ZH1T的Datasheet PDF文件第7页 
M68AR024D  
16 Mbit (1M x16) 1.8V Asynchronous SRAM  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
Figure 1. Packages  
I/O SUPPLY VOLTAGE: 1.5 to 1.95V  
1M WORDS x 16 bits LOW POWER SRAM  
EQUAL CYCLE and ACCESS TIME: 70ns  
BGA  
LOW V  
DATA RETENTION: 1.0V  
CC  
LOW STANDBY CURRENT  
TRI-STATE COMMON I/O  
SINGLE BYTE READ/WRITE  
AUTOMATIC POWER DOWN  
TFBGA48 (ZH)  
8 x 10 mm  
(for Engineering  
Samples only)  
BGA  
TFBGA48 (ZB)  
6.5 x 10 mm  
October 2002  
1/19  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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