Datasheet > M65608E

M65608E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
15页	337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

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M65608E 数据手册

M65608E

Write Cycle 3 CS1 or CS2,

Controlled

Note:

The internal write time of the memory is defined by the overlap of CS1 Low and CS2 HIGH and W LOW. Both signals must be

actived to initiate a write and either signal can terminate a write by going in actived. The data input setup and hold timing should

be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE = V_IH.

4151I–AERO–03/04

1...7 8 91011 12 13...15

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型号	品牌	获取价格	描述	数据表
M65608E_07	ATMEL	获取价格	Rad. Tolerant 128K x 8 5-volts Very Low Power CMOS SRAM
M65608E_09	ATMEL	获取价格	Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
M65609E	ATMEL	获取价格	Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
M65609E_07	ATMEL	获取价格	Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
M65609FP	MITSUBISHI	获取价格	Consumer Circuit, CMOS, PQFP100, 100P6S
M65610ASP	MITSUBISHI	获取价格	Y/C Separator IC, PDIP42, 0.600 INCH, SHRINK, PLASTIC, DIP-42
M65611SP	MITSUBISHI	获取价格	Y/C Separator IC, PDIP52, 0.600 INCH, SHRINK, PLASTIC, DIP-52
M65617	MITSUBISHI	获取价格	PICTURE-IN-PICTURE SIGNAL PROCESSING
M65617SP	MITSUBISHI	获取价格	PICTURE-IN-PICTURE SIGNAL PROCESSING
M65619FP	MITSUBISHI	获取价格	Consumer Circuit, CMOS, PQFP80, 80P6N, 80 PIN