Datasheet > M65608E

M65608E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
15页	337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

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数据手册

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M65608E 数据手册

Data Retention Characteristics

Typical

Parameter

Description

_CCfor data

Minimum

TA = 25 °C

Maximum

Unit

VCCDR

2.0

–

retention

Chip

deselect to

data

0.0

–

TCDR

retention

time

Operation

recovery

time

TAVAV⁽¹⁾

–

Data

retention

current at

2.0V

ICCDR1⁽²⁾

–

0.1

150

µA

Data

retention

current at

3.0V

ICCDR2⁽²⁾

–

0.2

200

µA

Notes: 1. TAVAV = Read Cycle Time

2. CS1 = V_CCor CS2 = CS1 = GND, Vin = GND/V_CC, this parameter is only tested at

_CC= 2V.

Write Cycle

Symbol

TAVAW

TAVWL

Parameter

65608-30

65608-45

Unit

Value

min

Write cycle time

Address set-up time

min

Address valid to end of

write

TAVWH

min

max

min

TDVWH

TE1LWH

TE2HWH

TWLQZ

TWLWH

Data set-up time

CS1 low to write end

CS2 high to write end

Write low to high Z⁽¹⁾

Write pulse width

Address hold from to

end of write

TWHAX

min

TWHDX

TWHQX

Data hold time

Write high to low Z⁽¹⁾

Note:

1. Parameters guaranteed, not tested, with output loading 5 pF.

M65608E

4151I–AERO–03/04

1...4 5 678 9 10...15

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