Datasheet > M65608E

M65608E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
15页	337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

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M65608E 数据手册

DC Parameters

DC Test Conditions

Table 3. DC Test Conditions

TA = -55°C to + 125°C; Vss = 0V; V_CC= 4.5V to 5.5V

Symbol

Description

Minimum

Typical

Maximum

Unit

Input leakage

current

IIX ⁽¹⁾

-1

–

µA

Output leakage

current

IOZ⁽¹⁾

-1

–

0.4

–

µA

VOL ⁽²⁾

VOH ⁽³⁾

Output low voltage

Output high

voltage

2.4

GND < Vin < V_CC, GND < Vout < V_CCOutput Disabled.

_CCmin. IOL = 8 mA.

_CCmin. IOH = -4 mA.

Consumption

Symbol

Description

65608E-30

65608E-45

Unit

Value

Standby supply

current

ICCSB ⁽¹⁾

ICCSB1 ⁽²⁾

ICCOP ⁽³⁾

max

Standby supply

current

300

130

300

100

µA

max

Dynamic operating

current

CS1 > V_IHor CS2 < V_ILand CS1 < V_IL.

CS1 > V_CC- 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.

F = 1/TAVAV, Iout = 0 mA, W = OE = V_IH, Vin = GND or V_CC, V_CCmax.

M65608E

4151I–AERO–03/04

1 2 3 456 7 8...15

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